The crystallization kinetics of amorphous (GST) thin films, generated by ion implantation, on top of crystalline GST, either in the cubic or hexagonal phase, was investigated by means of time resolved reflectivity measurements, x-ray diffraction, in situ transmission electron microscopy, and Raman analyses. The crystallization occurred at a lower temperature with respect to a fully amorphous film and in both cases the crystalline phase started growing at the underlying amorphous-crystalline (a-c) interface. However, it was not a solid phase epitaxial growth since cubic GST was always obtained, independent of the phase of the underlying crystal. We speculate that the a-c interface behaves as a continuous region of potential nucleation sites in the crystallization making the crystallization process more efficient.
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1 June 2010
Research Article|
June 04 2010
Crystallization of ion amorphized thin films in presence of cubic or hexagonal phase
R. De Bastiani;
R. De Bastiani
a)
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
2MATIS,
CNR-IMM
, 64 via S. Sofia, I-95123 Catania, Italy
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E. Carria;
E. Carria
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
2MATIS,
CNR-IMM
, 64 via S. Sofia, I-95123 Catania, Italy
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S. Gibilisco;
S. Gibilisco
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
2MATIS,
CNR-IMM
, 64 via S. Sofia, I-95123 Catania, Italy
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A. Mio;
A. Mio
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
3
CNR-Istituto per la Microelettronica e Microsistemi
, 50 Stradale Primosole, I-95121 Catania, Italy
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C. Bongiorno;
C. Bongiorno
3
CNR-Istituto per la Microelettronica e Microsistemi
, 50 Stradale Primosole, I-95121 Catania, Italy
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F. Piccinelli;
F. Piccinelli
4Laboratorio di Chimica dello Stato Solido, DB,
Università di Verona and INSTM
, UdR Verona, Cá Vignal 1, Strada Le Grazie 15, I-37134 Verona, Italy
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M. Bettinelli;
M. Bettinelli
4Laboratorio di Chimica dello Stato Solido, DB,
Università di Verona and INSTM
, UdR Verona, Cá Vignal 1, Strada Le Grazie 15, I-37134 Verona, Italy
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A. R. Pennisi;
A. R. Pennisi
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
2MATIS,
CNR-IMM
, 64 via S. Sofia, I-95123 Catania, Italy
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M. G. Grimaldi;
M. G. Grimaldi
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
2MATIS,
CNR-IMM
, 64 via S. Sofia, I-95123 Catania, Italy
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E. Rimini
E. Rimini
1Dipartimento di Fisica ed Astronomia,
Università di Catania
, 64 via S. Sofia, I-95123 Catania, Italy
3
CNR-Istituto per la Microelettronica e Microsistemi
, 50 Stradale Primosole, I-95121 Catania, Italy
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a)
Electronic mail: riccardo.debastiani@ct.infn.it.
J. Appl. Phys. 107, 113521 (2010)
Article history
Received:
February 14 2010
Accepted:
May 05 2010
Citation
R. De Bastiani, E. Carria, S. Gibilisco, A. Mio, C. Bongiorno, F. Piccinelli, M. Bettinelli, A. R. Pennisi, M. G. Grimaldi, E. Rimini; Crystallization of ion amorphized thin films in presence of cubic or hexagonal phase. J. Appl. Phys. 1 June 2010; 107 (11): 113521. https://doi.org/10.1063/1.3437636
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