Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation technology are attracting considerable attention as a promising technology for high performance bulk complementary metal-oxide semiconductor technology. We have investigated the structure and the gettering efficiency of the (110)/(100) interface parallelling each direction (DSB interface) by molecular dynamics (MD) and first-principles calculation. In MD calculations, initial calculation cells of 15 atomic-configurations with coincidence-site lattices were prepared. It was found that (i) the calculated DSB interface was stable independent of the initial atomic-configurations and (ii) the interfacial structures were essentially the same among the calculated models. Moreover, the calculated interfacial structure corresponds to the reported TEM observation. The first-principles calculation showed that Si atoms in the DSB interface formed covalent bonding. The dangling bonds in Si (110) and (100) surfaces disappeared due to restructuring in the DSB interface. Furthermore, the DSB interface, which exists just below the device active region, was found to be an efficient gettering site for Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and Hf atoms.
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1 June 2010
Research Article|
June 02 2010
Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates
Hiroaki Kariyazaki;
Hiroaki Kariyazaki
a)
1Department of System Engineering,
Okayama Prefectural University
, 111 Kuboki, Soja, Okayama 719-1197, Japan
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Tatsuhiko Aoki;
Tatsuhiko Aoki
1Department of System Engineering,
Okayama Prefectural University
, 111 Kuboki, Soja, Okayama 719-1197, Japan
2
Covalent Materials Co., Ltd.
, Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, Japan
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Koji Izunome;
Koji Izunome
2
Covalent Materials Co., Ltd.
, Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, Japan
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Koji Sueoka
Koji Sueoka
1Department of System Engineering,
Okayama Prefectural University
, 111 Kuboki, Soja, Okayama 719-1197, Japan
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a)
Electronic mail: kariyazaki@argon.cse.oka-pu.ac.jp.
J. Appl. Phys. 107, 113509 (2010)
Article history
Received:
December 07 2009
Accepted:
March 26 2010
Citation
Hiroaki Kariyazaki, Tatsuhiko Aoki, Koji Izunome, Koji Sueoka; Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates. J. Appl. Phys. 1 June 2010; 107 (11): 113509. https://doi.org/10.1063/1.3407525
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