By first-principles density functional calculations with generalized gradient approximation ZnO:Co thin films have been demonstrated not to exhibit a ferromagnetic behavior in the absence of any additional carrier doping. Virtual crystal approximation is employed to introduce controlled hole concentrations by N codoping in dilute concentrations of 1–5 at. %. The results show that N codoping can change the ground state from antiferromagnetic to ferromagnetic while maximum ferromagnetic state stability occurs for a N concentration of 2 at. % which is practically achievable. Density of states analyses confirm that the substitutional N in the ZnO:Co thin film provides shallow acceptor states. N codoping is suggested to be a promising technique to realize -type dilute magnetic semiconducting thin films in the dominantly paramagnetic ZnO:Co system.
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1 November 2009
Research Article|
November 09 2009
N codoping induced ferromagnetism in ZnO:Co thin films
M. H. N. Assadi;
M. H. N. Assadi
School of Materials Science and Engineering,
The University of New South Wales
, Sydney, New South Wales 2052, Australia
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Y. B. Zhang;
Y. B. Zhang
a)
School of Materials Science and Engineering,
The University of New South Wales
, Sydney, New South Wales 2052, Australia
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S. Li
S. Li
School of Materials Science and Engineering,
The University of New South Wales
, Sydney, New South Wales 2052, Australia
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a)
Author to whom correspondence should be addressed. Tel.: +61 2 93859934. FAX: +61 2 93855956. Electronic mail: y.zhang@unsw.edu.au.
J. Appl. Phys. 106, 093911 (2009)
Article history
Received:
July 17 2009
Accepted:
September 30 2009
Citation
M. H. N. Assadi, Y. B. Zhang, S. Li; N codoping induced ferromagnetism in ZnO:Co thin films. J. Appl. Phys. 1 November 2009; 106 (9): 093911. https://doi.org/10.1063/1.3256123
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