The dispersion in the dot size, shape, and composition leads to a difficult comparison with experimental spectroscopy and transport data even if the growth conditions are similar. In this work, an extensive analysis of the influence of the dot size and shape on the electron and hole energy states and on transition energies is carried out using a unified model of the semiconductor band structure. In this study we obtain the electron energy spectra for three-dimensional small InAsGaAs quantum dots of several different truncated shapes described in the literature: tetrahedral, pyramidal with base of different geometry, etc. Also, in order to give an idea of the flexibility of the method, the icosahedral geometry is analyzed. The combination of theoretical results using a unified model for all the geometries with structural techniques will allow a more precise analysis of experimental samples.

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