Nonmagnetic thin layers of $Ni3N$

From structural analysis by x-ray diffraction, Rutherford backscattering spectroscopy, and physical investigations (magnetization and resistance), reactive sputtering assisted by microwave multidipolar plasma appears to be a powerful means for tailoring the stoichiometry of transition metal nitrides. Reactive sputtered nitride Ni layers were elaborated while keeping the Ar partial pressure constant $(∼1.5μbar)$ and varying the $N2$ partial pressure in the $0.1–0.5μbar$ range. A mixing of $Ni2N$ and $Ni3N$ and a single-phase $Ni3N$ are stabilized in thin layers for high and low $p(N2)$⁠, respectively. For the first time, an optimization of the crystallization of $Ni3N$ pure layers is obtained for intermediate $p(N2)$ $(0.23μbar)$⁠. Both nitrided phases $Ni2N$ and $Ni3N$⁠, elaborated with appropriate deposition parameters, do not present ferromagnetic behavior in contrast to experimental results in the literature. Theoretical results using the full-potential linearized augmented plane wave method confirm the nonferromagnetic behavior of nitrided phases. $Ni3N$ could be used as nonmagnetic spacer layer in spintronic devices.