Noise analysis in type-II InAs/GaSb focal plane arrays

A long wavelength infrared focal plane array based on type-II InAs/GaSb superlattices was fabricated and characterized at 80 K. The noise equivalent temperature difference in the array was measured as low as 23 mK for an integration time of 0.129 ms. The noise behavior of the detectors was properly described by a model based on thermal, shot, read out integrated circuit, and photon noises. The noise of the imager was dominated by photon noise for photon fluxes higher than $1.8×1015phs−1cm−2$⁠. At lower irradiance, the imager was limited by the shot noise generated by the dark current or the noise of the testing system. The superlattice detector did not create $1/f$ noise for frequencies above 4 mHz. As a result, the focal plane array did not require frequent calibrations.