Admittance spectroscopy is extended for measuring capacitance and conductance on metal-oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and temperature. An automatic setup has been designed for collecting data along these dimensions in one measurement cycle. The theory for admittance spectroscopy has been developed by starting from basic charge carrier statistics. Using numerical integration of energy dependent parameters instead of the commonly used analytical solution, conductance dispersion curves are obtained which do not need to be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface. Also, we find that interface state densities extracted by using traditional methods are four times lower than those obtained by using our theory. Experimental data presented in three-dimensional plots are compared with theoretical calculations, revealing the possibilities and limitations of the conductance method.
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1 September 2009
Research Article|
September 11 2009
Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems
J. Piscator;
J. Piscator
Department of Microtechnology and Nanoscience—MC2,
Chalmers University of Technology
, SE-412 96 Göteborg, Sweden
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B. Raeissi;
B. Raeissi
Department of Microtechnology and Nanoscience—MC2,
Chalmers University of Technology
, SE-412 96 Göteborg, Sweden
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O. Engström
O. Engström
a)
Department of Microtechnology and Nanoscience—MC2,
Chalmers University of Technology
, SE-412 96 Göteborg, Sweden
Search for other works by this author on:
J. Piscator
B. Raeissi
O. Engström
a)
Department of Microtechnology and Nanoscience—MC2,
Chalmers University of Technology
, SE-412 96 Göteborg, Sweden
a)
Electronic mail: [email protected].
J. Appl. Phys. 106, 054510 (2009)
Article history
Received:
May 12 2009
Accepted:
August 07 2009
Citation
J. Piscator, B. Raeissi, O. Engström; Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems. J. Appl. Phys. 1 September 2009; 106 (5): 054510. https://doi.org/10.1063/1.3213384
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