Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature, we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.
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15 December 2009
Research Article|
December 17 2009
Diameter-dependent conductance of InAs nanowires Available to Purchase
Marc Scheffler;
Marc Scheffler
a)
1Kavli Institute of Nanoscience,
Delft University of Technology
, 2600 GA Delft, The Netherlands
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Stevan Nadj-Perge;
Stevan Nadj-Perge
1Kavli Institute of Nanoscience,
Delft University of Technology
, 2600 GA Delft, The Netherlands
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Leo P. Kouwenhoven;
Leo P. Kouwenhoven
1Kavli Institute of Nanoscience,
Delft University of Technology
, 2600 GA Delft, The Netherlands
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Magnus T. Borgström;
Magnus T. Borgström
b)
2
Philips Research Laboratories Eindhoven
, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
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Erik P. A. M. Bakkers
Erik P. A. M. Bakkers
2
Philips Research Laboratories Eindhoven
, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
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Marc Scheffler
1,a)
Stevan Nadj-Perge
1
Leo P. Kouwenhoven
1
Magnus T. Borgström
2,b)
Erik P. A. M. Bakkers
2
1Kavli Institute of Nanoscience,
Delft University of Technology
, 2600 GA Delft, The Netherlands
2
Philips Research Laboratories Eindhoven
, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
a)
Electronic mail: [email protected]. Present address: 1. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany.
b)
Present address: Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
J. Appl. Phys. 106, 124303 (2009)
Article history
Received:
September 21 2009
Accepted:
November 02 2009
Citation
Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, Erik P. A. M. Bakkers; Diameter-dependent conductance of InAs nanowires. J. Appl. Phys. 15 December 2009; 106 (12): 124303. https://doi.org/10.1063/1.3270259
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