The thermal and ultraviolet (UV) stability of crystalline silicon surface passivation provided by atomic layer deposited was compared with results for thermal . For and stacks on -type , ultralow surface recombination velocities of were obtained and the passivation proved sufficiently stable against a high temperature “firing” process used for screen printed solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of and . also demonstrated UV stability with the surface passivation improving during UV irradiation.
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