Hydrodynamic instabilities in two-dimensional electron flow in ungated semiconductors are studied here. The driving force for the electrons is an imposed voltage difference that generates a unidimensional electric field inside the semiconductor and its surroundings. The governing equations are linearized for small perturbations around the steady-flow solution. The eigenvalue spectrum determining the rates of growth and wave numbers of the oscillations is calculated. The electron flow undergoes oscillatory instability and becomes more unstable as the voltage difference is increased. The results show that it is possible to obtain oscillation frequencies of the order of terahertz, indicating the possibility of radiative power at this frequency.
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1 July 2009
Research Article|
July 10 2009
Hydrodynamic instability of confined two-dimensional electron flow in semiconductors
Williams R. Calderón-Muñoz;
Williams R. Calderón-Muñoz
a)
1Department of Aerospace and Mechanical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Debdeep Jena;
Debdeep Jena
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Mihir Sen
Mihir Sen
1Department of Aerospace and Mechanical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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a)
Currently on leave from the Departamento de Ingeniería Mecánica, Universidad de Chile, Casilla 2777, Santiago, Chile.
J. Appl. Phys. 106, 014506 (2009)
Article history
Received:
March 26 2009
Accepted:
May 30 2009
Citation
Williams R. Calderón-Muñoz, Debdeep Jena, Mihir Sen; Hydrodynamic instability of confined two-dimensional electron flow in semiconductors. J. Appl. Phys. 1 July 2009; 106 (1): 014506. https://doi.org/10.1063/1.3158551
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