Different distributions of Si nanocrystals (nc-Si) in the gate oxide of Al/nc-Si embedded diodes are synthesized with Si ion implantation technique. Current conduction in the diodes with different nc-Si distributions has been investigated. It is shown that under a positive gate bias Fowler–Nordheim (FN) tunneling from the Si substrate to the oxide, the nanocrystal-assisted conduction (e.g., tunneling, Frenkel–Poole emission) and the nanocrystal-assisted FN tunneling contribute to the current conduction depending on both the nc-Si distribution and magnitude of the gate bias. In the case that nc-Si is densely distributed throughout the oxide, a huge enhancement in the current conduction is observed as a result of the formation of many percolative conduction paths by the nc-Si connecting the gate to the Si substrate.
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1 July 2009
Research Article|
July 14 2009
Current conduction in Al/Si nanocrystal embedded diodes with various distributions of Si nanocrystals in the oxide Available to Purchase
J. I. Wong;
J. I. Wong
a)
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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T. P. Chen;
T. P. Chen
b)
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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M. Yang;
M. Yang
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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Y. Liu;
Y. Liu
2State Key Laboratory of Electronic Thin Films and Integrated Devices,
University of Electronic Science and Technology of China
, Chengdu, Sichuan 610054, People’s Republic of China
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C. Y. Ng;
C. Y. Ng
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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L. Ding
L. Ding
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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J. I. Wong
1,a)
T. P. Chen
1,b)
M. Yang
1
Y. Liu
2
C. Y. Ng
1
L. Ding
1
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
2State Key Laboratory of Electronic Thin Films and Integrated Devices,
University of Electronic Science and Technology of China
, Chengdu, Sichuan 610054, People’s Republic of China
a)
Electronic mail: [email protected].
b)
Electronic mail: [email protected].
J. Appl. Phys. 106, 013718 (2009)
Article history
Received:
March 31 2009
Accepted:
May 26 2009
Citation
J. I. Wong, T. P. Chen, M. Yang, Y. Liu, C. Y. Ng, L. Ding; Current conduction in Al/Si nanocrystal embedded diodes with various distributions of Si nanocrystals in the oxide. J. Appl. Phys. 1 July 2009; 106 (1): 013718. https://doi.org/10.1063/1.3159013
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