The x-ray spectroscopy performance of In/Al doped CdZnTe planar detectors based on as-grown crystals were investigated at room temperature, using a Tb x-ray source with a principle energy of 44.2 keV. The observed broadening in the photopeak resolution was attributed to incomplete charge carrier collection due to carrier trapping and scattering by the defects in the crystal. Alpha particle spectroscopy and pulse shape rise time analysis were used to measure the electron mobility lifetime product , as well as the mobility of the CdZnTe material grown with different dopant concentrations. To further clarify the role of the dopant and associated trapping states, temperature dependent alpha particle spectroscopy and pulse shapes were investigated at various applied bias fields over a temperature range from 200 to 300 K. CdZnTe doped with 1.5 ppm In exhibits excellent x-ray spectral resolution and charge transport properties, which implies a lower density of trapping centers in the crystal. The deep levels associated with have been tentatively recognized as electron trapping centers and this is confirmed by the observed reduction in electron lifetime in CdZnTe crystal with 15 ppm In. Additionally, a shallower electron detrapping defect, with an activation energy of , was also discovered to be simultaneously present in the crystal. In 30 ppm Al doped CdZnTe, however, the carrier mobility was significantly degraded due to scattering of the ionized centers attributed to the aluminum interstitial .
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15 April 2009
Research Article|
April 16 2009
Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals
Y. Xu;
Y. Xu
a)
1School of Materials Science and Engineering,
Northwestern Polytechnical University
, Xi’an 710072, China
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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P. J. Sellin;
P. J. Sellin
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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A. Lohstroh;
A. Lohstroh
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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W. Jie;
W. Jie
1School of Materials Science and Engineering,
Northwestern Polytechnical University
, Xi’an 710072, China
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T. Wang;
T. Wang
1School of Materials Science and Engineering,
Northwestern Polytechnical University
, Xi’an 710072, China
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C. Mills;
C. Mills
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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P. Veeramani;
P. Veeramani
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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M. Veale
M. Veale
2Department of Physics,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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a)
Author to whom correspondence should be addressed. Electronic mail: npuxyd220@hotmail.com.
J. Appl. Phys. 105, 083101 (2009)
Article history
Received:
October 15 2008
Accepted:
February 06 2009
Citation
Y. Xu, P. J. Sellin, A. Lohstroh, W. Jie, T. Wang, C. Mills, P. Veeramani, M. Veale; Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals. J. Appl. Phys. 15 April 2009; 105 (8): 083101. https://doi.org/10.1063/1.3097301
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