Rectifying characteristics and transport behavior of the $La0.9Hf0.1MnO3/Nb$-doped $SrTiO3$ heterojunction Available to Purchase

$La0.9Hf0.1MnO3$ (LHMO) films were grown on (001) $SrTiO3$ (LHMO/STO) and (001) 0.7% Nd-doped STO (LHMO/STON) substrates under the same conditions by using pulsed laser deposition technique. The x-ray diffraction and rocking curve measurements demonstrated high epitaxy and good crystallinity obtained in our films. The curves of resistance versus temperature indicated that the as-grown LHMO film exhibits a paramagnetic-ferromagnetic transition at Curie temperature $TC$⁠. The LHMO/STON heterojunctions exhibited asymmetric current-voltage characteristics similar to those of traditional semiconductor junctions and a typical temperature-dependent rectifying property in a wide temperature range from 20 to 300 K. The diffusion voltage $(Vd)$ of the junction decreases almost linearly with the decrease in temperature. At a negative bias voltage, the dependence of the junction resistance $(V/I)$ on temperature showed an insulator-metal transition in the vicinity of $TC$⁠, as the voltage decreased from −2 to −7 V. The results were discussed by considering the band diagram of LHMO/STON junction and the tunneling current through the junction.