Experimental studies about electrical activation and clustering of B implanted in crystalline Ge (c-Ge) are reported. To this aim, we structurally and electrically investigated c-Ge samples implanted at different temperatures with B at 35 keV in the high-concentration dopant regime (0.6725×1020B/cm3). We elucidated that a high level of damage, in the form of amorphous pockets, favors the electrical activation of the dopant, and a complete activation was achieved for properly chosen implant conditions. We found, by joining channeling measurements with the electrical ones, that the reason for incomplete B activation is the formation of B-Ge complexes with a well-defined stoichiometry of 1:8. The thermal stability of the B-doped samples, up to 550°C, was also investigated. The tested stability demonstrates that the B clustering, responsible of B inactivity, is characterized by high binding energies and higher thermal budgets are needed to make them to dissolve. These studies, besides clarify the physical mechanisms by which B dopes Ge, can be helpful for the realization of ultrashallow junctions for the future generation devices.

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