We studied the transport and magnetic properties of low-doped manganite films after different oxygenation processes. The oxygen content was adjusted by postdeposition annealing at different oxygen pressures and annealing times. For all the samples we observed an increase in the Curie temperature and the remnant magnetization with the oxygen content. In general, for decreasing number of oxygen vacancies, samples under expansive strain become more homogeneous and their electrical resistivity decreases. A metal-insulator transition is induced in highly oxygenated films grown on , probably related to a shift of the mobility edge crossing below the Fermi energy. We found that the oxygenation dynamics depend critically on the strain field induced by the substrates and also on the Sr doping concentration.
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1 February 2009
Research Article|
February 02 2009
Metal-insulator transition induced by postdeposition annealing in low doped manganite films
M. Sirena;
M. Sirena
a)
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica -
Universidad Nacional de Cuyo
, Av. Bustillo 9500 - Km 9.5, San Carlos de Bariloche 8400, Río Negro, Argentina
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N. Haberkorn;
N. Haberkorn
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica -
Universidad Nacional de Cuyo
, Av. Bustillo 9500 - Km 9.5, San Carlos de Bariloche 8400, Río Negro, Argentina
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M. Granada;
M. Granada
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica -
Universidad Nacional de Cuyo
, Av. Bustillo 9500 - Km 9.5, San Carlos de Bariloche 8400, Río Negro, Argentina
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L. B. Steren;
L. B. Steren
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica -
Universidad Nacional de Cuyo
, Av. Bustillo 9500 - Km 9.5, San Carlos de Bariloche 8400, Río Negro, Argentina
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J. Guimpel
J. Guimpel
Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica -
Universidad Nacional de Cuyo
, Av. Bustillo 9500 - Km 9.5, San Carlos de Bariloche 8400, Río Negro, Argentina
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a)
Electronic mail: martin.sirena@hotmail.com.
J. Appl. Phys. 105, 033902 (2009)
Article history
Received:
June 10 2008
Accepted:
December 13 2008
Citation
M. Sirena, N. Haberkorn, M. Granada, L. B. Steren, J. Guimpel; Metal-insulator transition induced by postdeposition annealing in low doped manganite films. J. Appl. Phys. 1 February 2009; 105 (3): 033902. https://doi.org/10.1063/1.3073894
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