We report the determination of free-electron concentration and mobility of free-standing GaN nanowires (NWs) by line shape analysis of the coupled longitudinal optical phonon-plasmon Raman modes . The phonon mode at with a sharp linewidth of indicates strain free NWs with high crystalline perfection. The lattice temperature of the NWs was varied between 313 and 472 K by varying the excitation laser beam power. For unintentionally doped samples at room temperature, an average electron concentration and mobility of strain free NWs were found to be and , respectively. We have shown that the electron concentration does not change significantly over a temperature range between 313 and 472 K. The electron mobility decreases at high temperatures, in agreement with literature data for compact layers. For Si-doped NWs, the phonon peak is strongly upshifted indicating a higher free-carrier concentration of about . Asymmetric broadening observed at the lower frequency side of the phonon peak might be ascribed to the enhancement in surface optical modes due to the high surface-to-volume ratio of NWs.
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15 June 2009
Research Article|
June 22 2009
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
K. Jeganathan;
K. Jeganathan
a)
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
2Centre for Nanoscience and Nanotechnology,
Bharathidasan University
, Tiruchirappalli, 620 024, India
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R. K. Debnath;
R. K. Debnath
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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R. Meijers;
R. Meijers
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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T. Stoica;
T. Stoica
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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R. Calarco;
R. Calarco
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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D. Grützmacher;
D. Grützmacher
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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H. Lüth
H. Lüth
1Institute of Bio-and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI),
Research Centre Jülich GmbH
, D-52425 Jülich, Germany
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a)
Electronic mail: [email protected].
J. Appl. Phys. 105, 123707 (2009)
Article history
Received:
February 05 2009
Accepted:
May 09 2009
Citation
K. Jeganathan, R. K. Debnath, R. Meijers, T. Stoica, R. Calarco, D. Grützmacher, H. Lüth; Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires. J. Appl. Phys. 15 June 2009; 105 (12): 123707. https://doi.org/10.1063/1.3148862
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