We have investigated analytically the influence of band non-parabolicity on the quantized gate capacitance in n-channel inversion layers of AlxGa1xAsGaAs, In1xAsxSbInSb, and In1xAlxAsIn1xGaxAsyP1xδ-doped modulation field effect devices, whose channel electrons obey the three, two, and the parabolic energy band models of Kane. The quantized gate capacitance has been investigated by including the effects of electric subbands under quantum mechanical treatment on GaAs, InSb, and In1xGaxAsyP1y lattices matched to InP as channel materials. The oscillatory dependence of the quantized gate capacitance as a function of surface electric field and gate bias signatures directly the two-dimensional quantum confinement of the carriers. The influence of the band non-parabolicity of the confined carriers significantly influences the value of the gate capacitance. The result of the gate capacitances for the parabolic energy band model forms a special case of our generalized theoretical formalism.

1.
T.
Sugaya
,
T.
Yamane
,
M.
Ogura
,
K.
Komori
, and
K.
Yonei
,
J. Cryst. Growth
278
,
94
(
2005
).
2.
Y.
Wang
and
S. Y.
Chou
,
Appl. Phys. Lett.
63
,
2257
(
1993
).
3.
D.
Ramamurthy
and
C. H.
Wu
,
Phys. Rev. B
66
,
115307
(
2002
).
4.
S.
Amaha
,
T.
Hatano
,
S.
Teraoka
,
A.
Shibatomi
,
S.
Tarucha
,
Y.
Nakata
,
T.
Miyazawa
,
T.
Oshima
,
T.
Usuki
, and
N.
Yokoyama
,
Appl. Phys. Lett.
92
,
202109
(
2008
).
5.
S. -T.
Cheng
and
C. -Y.
Wang
,
IEEE Trans. Circuits Syst., I: Regul. Pap.
53
,
316
(
2006
).
6.
T.
van Zoest
,
T.
Müller
,
T.
Wendrich
,
M.
Gilowski
,
E. M.
Rasel
,
T.
Könemann
,
C.
Lämmerzahl
,
H. J.
Dittus
,
A.
Vogel
,
K.
Bongs
,
K.
Sengstock
,
W.
Lewoczko
, and
A.
Peters
,
Proc. SPIE
6483
,
648306
(
2007
).
7.
G. K.
Brennen
,
C. M.
Caves
,
P. S.
Jessen
, and
I. H.
Deutsch
,
Phys. Rev. Lett.
82
,
1060
(
1999
).
8.
L.
Liao
,
A.
Liu
,
D.
Rubin
,
J.
Basak
,
Y.
Chetrit
,
H.
Nguyen
,
R.
Cohen
,
N.
Izhaky
, and
M.
Paniccia
,
Electron. Lett.
43
,
1196
(
2007
).
9.
K. E.
Stubkjaer
,
Proceedings of the International Conference Optical Switching Systems Using Nanostructures; Lasers and Electro-Optics, (CLEO)
,
2004
(unpublished), Vol.
2
, p.
2
.
10.
A.
Cho
and
H.
Casey
,
IEEE J. Quantum Electron.
10
,
791
(
1974
).
11.
S.
Nagata
,
T.
Tanaka
, and
M.
Fukai
,
Appl. Phys. Lett.
30
,
503
(
1977
).
12.
S.
Harrer
,
S.
Strobel
,
G.
Scarpa
,
G.
Abstreiter
,
M.
Tornow
, and
P.
Lugli
,
IEEE Trans. Nanotechnol.
7
,
363
(
2008
).
13.
A.
Tukiainen
,
L.
Toikkanen
,
M.
Haavisto
,
V.
Erojrvi
,
V.
Rimpilinen
,
J.
Viheril
, and
M.
Pessa
,
IEEE Photonics Technol. Lett.
18
,
2257
(
2006
).
14.
S. -G.
Ihn
,
J. -I.
Song
,
Y. -H.
Kim
,
J. Y.
Lee
, and
I. -H.
Ahn
,
IEEE Trans. Nanotechnol.
6
,
384
(
2007
).
15.
R.
Dingle
,
H. L.
Stormer
,
A. C.
Gossard
, and
W.
Wiegmann
,
Appl. Phys. Lett.
33
,
665
(
1978
).
16.
S.
Datta
,
Microelectron. Eng.
84
,
2133
(
2007
).
17.
R.
Chau
,
S.
Datta
,
M.
Doczy
,
B.
Doyle
,
B.
Jin
,
J.
Kavalieros
,
A.
Majumdar
,
M.
Metz
, and
M.
Radosavljevic
,
IEEE Trans. Nanotechnol.
4
,
153
(
2005
).
18.
T.
Ashley
,
L.
Buckle
,
S.
Datta
,
M. T.
Emeny
,
D. G.
Hayes
,
K. P.
Hilton
,
R.
Jefferies
,
T.
Martin
,
T. J.
Phillips
,
D. J.
Wallis
,
P. J.
Wilding
, and
R.
Chau
,
Electron. Lett.
43
,
777
(
2007
).
19.
J. S.
Moon
,
W.
Shihchang
,
D.
Wong
,
I.
Milosavljevic
,
A.
Conway
,
P.
Hashimoto
,
M.
Hu
,
M.
Antcliffe
, and
M.
Micovic
,
IEEE Electron Device Lett.
26
,
348
(
2005
).
20.
Y.
Cai
,
K. J.
Chen
, and
K. M.
Lauet
,
IEEE Electron Device Lett.
26
,
435
(
2005
).
21.
K.
Hikosaka
,
S.
Sasa
,
N.
Harada
, and
S.
Kurodaet
,
IEEE Electron Device Lett.
9
,
241
(
1988
).
22.
I.
Thayne
,
M.
Holland
,
Y. C.
Chen
,
W. Q.
Li
,
A.
Paulsen
,
S.
Beaumont
, and
P.
Bhattacharya
,
Tech. Dig. - Int. Electron Devices Meet.
225
(
1993
).
23.
T.
Enoki
,
M.
Tomizawa
,
Y.
Umeda
, and
Y.
Ishii
,
Jpn. J. Appl. Phys., Part 1
33
,
798
(
1994
).
24.
K.
Shinohara
,
Y.
Yamashita
,
A.
Endoh
,
K.
Hikosaka
,
T.
Matsui
,
T.
Mimura
, and
S.
Hiyamizu
,
Jpn. J. Appl. Phys., Part 1
41
,
437
(
2002
).
25.
W.
Kruppa
,
J. B.
Boos
,
B. R.
Bennett
,
N. A.
Papanicolaou
,
D.
Park
, and
R.
Bass
,
Electron. Lett.
42
,
688
(
2006
).
26.
Z. H.
Feng
,
J. Y.
Yin
,
F. P.
Yuan
,
B.
Liu
,
Z.
Feng
, and
S. J.
Cai
,
Proc. SPIE
6984
,
698435
(
2008
).
27.
R.
Chau
,
S.
Datta
, and
A.
Majumdar
,
Proceedings of the IEEE CSIC Digest
,
2005
(unpublished).
28.
F.
Koch
,
A.
Zrenner
, and
M.
Zachau
, in
Two Dimensional Systems: Physics and New Devices
,
Series in Solid State Science
Vol.
67
, edited by
G.
Bauer
,
F.
Kucher
, and
H.
Heinrich
(
Springer
,
New York
,
1986
), p.
175
.
29.
S. J.
Koester
,
J. O.
Chu
, and
C. S.
Webster
,
Electron. Lett.
36
,
674
(
2000
).
30.
H.
Leier
,
A.
Vescan
,
R.
Dietrich
,
A.
Wieszt
, and
H.
Tobler
,
Proceedings of the IEE Digest
,
1999
(unpublished), Vol.
4
, p.
1999
.
31.
Y. H.
Lo
,
M.
Bagheri
,
P. S. D.
Lin
,
P.
Grabbe
,
R.
Bhat
,
N. G.
Stoffel
,
T. P.
Lee
, and
D. T.
Kong
,
Electron. Lett.
26
,
807
(
1990
).
32.
P.
Valizadeh
,
D.
Pavlidis
,
K.
Shiojima
,
T.
Makimura
, and
N.
Shigekawa
,
Solid-State Electron.
49
,
1352
(
2005
).
33.
M. J.
Rack
,
T. J.
Thornton
,
D. K.
Ferry
,
J.
Huffman
, and
R.
Westhoff
,
Solid-State Electron.
45
,
1199
(
2001
).
34.
J. J.
Rosenberg
,
M.
Benlamri
,
P. D.
Kirchner
,
J. M.
Woodall
, and
G. D.
Pettit
,
IEEE Electron Device Lett.
6
,
491
(
1985
).
35.
B.
Pereiaslavets
,
G. H.
Martin
,
L. F.
Eastman
,
R. W.
Yanka
,
J. M.
Ballingall
,
J.
Braunstein
,
K. H.
Bachem
, and
B. K.
Ridley
,
IEEE Trans. Electron Devices
44
,
1341
(
1997
).
36.
T.
Henderson
,
M. I.
Aksun
,
C. K.
Peng
,
H.
Morkoq
,
P. C.
Chao
,
P. M.
Smith
,
K. -H. G.
Duh
, and
L. F.
Lester
,
IEEE Electron Device Lett.
7
,
649
(
1986
).
37.
J.
Mateos
,
B. G.
Vasallo
,
D.
Pardo
,
T.
González
,
J. S.
Galloo
,
Y.
Roelens
,
S.
Bollaert
, and
A.
Cappy
,
Nanotechnology
14
,
117
(
2003
).
38.
J. I.
Nishizawa
,
P.
Plotka
, and
T.
Kurabayashi
,
IEEE Trans. Electron Devices
49
,
1102
(
2002
).
39.
L. D.
Nguyen
, “
Realization of Ultra-High-Speed Field Effect Transistors
,” Ph.D. thesis, Cornell University,
1989
.
40.
H.
Morkoc
,
H.
Unlu
, and
G.
Ji
,
Principles and Technology of MODFET’s
(
Wiley
,
New York
,
1991
), and references cited therein.
41.
E. F.
Schubert
,
A.
Fischer
, and
K.
Ploog
,
IEEE Trans. Electron Devices
33
,
625
(
1986
).
42.
S. L. G.
Chu
,
J. C.
Huang
,
A.
Bertand
,
M. J.
Schindler
,
W.
Struble
,
R.
Binder
, and
W.
Hoke
,
Proceedings of the IEEE GaAs IC Symposium Technical Digest
,
1992
(unpublished), p.
221
.
43.
R. E.
Williams
and
D. W.
Shaw
,
Electron. Lett.
13
,
408
(
1977
).
44.
M. -J.
Kao
,
H. -M.
Shieh
,
W. -C.
Hsu
,
T. -Y.
Lin
,
Y. -H.
Wu
, and
R. -T.
Hsu
,
IEEE Trans. Electron Devices
43
,
1181
(
1996
).
45.
T.
Ando
,
A. B.
Fowler
, and
F.
Stern
,
Rev. Mod. Phys.
54
,
437
(
1982
).
46.
F.
Stern
and
W. E.
Howard
,
Phys. Rev.
163
,
816
(
1967
).
47.
W.
Zawadzki
,
16
,
229
(
1983
).
48.
E. O.
Kane
,
J. Phys. Chem. Solids
1
,
249
(
1957
).
49.
B. R.
Nag
,
Electron Transport in Compound Semiconductors
(
Springer-Verlag
,
Berlin
,
1980
).
50.
T.
Fiedler
, Ph.D. Thesis,
Technische Hochschule Ilmenau
,
1984
.
51.
G.
Paasch
,
T.
Fiedler
,
M.
Kolar
, and
I.
Bartos
,
Phys. Status Solidi B
118
,
641
(
1983
).
52.
J. -P.
Zollner
,
H.
Ubensee
,
G.
Paasch
,
T.
Fiedler
, and
G.
Gobsch
,
Phys. Status Solidi B
134
,
837
(
1986
).
53.
J. -P.
Zollner
and
G.
Paasch
,
Phys. Status Solidi B
151
,
145
(
1989
).
54.
M.
Abramowitz
and
I. A.
Stegun
,
Handbook of Mathematical Functions
(
Verlag, Harry, Deutsch
,
Frankfurt am Main
,
1984
).
55.
J. S.
Blackmore
,
Semiconductor Statistics
(
Pergamon
,
Oxford
,
1962
).
56.
P.
Roblin
and
H.
Rhodin
,
High Speed Heterostructure Devices: From Device Concept to Circuit Modeling
(
Cambridge University Press
,
Cambridge, England
,
2006
).
57.
J. H.
Davies
,
Physics of Low Dimensional Semiconductors
(
Cambridge University Press
,
Cambridge, England
,
1996
).
58.
S.
Datta
,
Electron Transport in Mesoscopic Systems
(
Cambridge University Press
,
Cambridge, England
,
1997
).
59.
M.
Lundstrom
and
J.
Guo
,
Nanoscale Transistors
(
Springer
,
New York
,
2006
).
60.
M.
Lundstrom
,
Fundamentals of Carrier Transport
(
Cambridge University Press
,
Cambridge, England
,
2000
).
61.
G. A.
Antcliffe
,
R. T.
Bate
, and
R. A.
Reynolds
,
Proceedings of the International Conference on Physics of Semi-Metals and Narrow-Gap Semiconductors
, edited by
D. L.
Carter
and
R. T.
Bate
(
Pergamon
,
Oxford
,
1971
), p.
499
.
62.
O.
Madelung
,
Semiconductors: Data Handbook
, 3rd ed. (
Springer
,
New York
,
2004
).
63.
J. M. S.
Orr
,
P. D.
Buckle
,
M.
Fearn
,
P. J.
Wilding
,
C. J.
Bartlett
,
M. T.
Emeny
,
L.
Buckle
, and
T.
Ashley
,
Semicond. Sci. Technol.
21
,
1408
(
2006
).
64.
S.
Adachi
,
GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties
(
World Scientific
,
Singapore
,
1994
).
65.
S.
Adachi
,
J. Appl. Phys.
58
,
R1
(
1985
).
66.
J. S.
Escher
,
L. W.
James
,
R.
Sankaran
,
G. A.
Antypas
,
R. L.
Moon
, and
R. L.
Bell
,
J. Vac. Sci. Technol.
13
,
874
(
1976
).
67.
K. J.
Nash
,
M. S.
Skolnick
, and
S. J.
Bass
,
Semicond. Sci. Technol.
2
,
329
(
1987
).
68.
Y.
Jin
,
Solid-State Electron.
34
,
117
(
1991
).
69.
W. P.
Hong
,
R.
Bhat
,
J. R.
Hayes
,
C.
Nguyen
,
M.
Koza
, and
G. K.
Chang
,
IEEE Electron Device Lett.
12
,
559
(
1991
).
70.
L.
Aina
,
M.
Durgess
,
M.
Motingly
,
J. M.
O’Conner
,
A.
Meerschaert
,
M.
Tong
,
A.
Ketterson
, and
A.
Adesida
IEEE Electron Device Lett.
12
,
483
(
1991
).
71.
Optoelectronic Integration: Physics, Technology and Application
, edited by
O.
Wada
(
Springer
,
New York
,
1994
).
72.
J.
Singh
,
Semiconductor Optoelectronics: Physics and Technology
(
McGraw-Hill
,
New York
,
1995
).
73.
N. T.
Linch
,
Festkoerperprobleme
23
,
227
(
1985
).
74.
G.
Chindalore
,
S. A.
Hareland
,
S.
Jallepalli
,
A. F.
Tasch
, Jr.
,
C. M.
Maziar
,
V. K. F.
Chia
, and
S.
Smith
,
IEEE Electron Device Lett.
18
,
206
(
1997
).
75.
A.
Chandra
and
M. C.
Foisy
,
IEEE Trans. Electron Devices
38
,
1238
(
1991
).
76.
J. N.
Schulman
and
Y. C.
Chang
,
Phys. Rev. B
24
,
4445
(
1981
).
77.
P. K.
Chakraborty
,
S.
Bhattacharya
, and
K. P.
Ghatak
,
J. Appl. Phys.
98
,
053517
(
2005
).
78.
K. P.
Ghatak
,
S.
Bhattacharya
,
S.
Bhowmik
,
R.
Benedictus
, and
S.
Choudhury
,
J. Appl. Phys.
103
,
094314
(
2008
).
79.
Z. A.
Weinberg
,
Solid-State Electron.
20
,
11
(
1977
).
80.
S.
Luryi
,
Appl. Phys. Lett.
52
,
501
(
1988
).
81.
H. S.
Pal
,
K. D.
Cantley
,
S. S.
Ahmed
, and
M. S.
Lundstrom
,
IEEE Trans. Electron Devices
55
,
904
(
2008
).
82.
M.
Zhu
,
A.
Usher
,
A. J.
Matthews
,
A.
Potts
,
M.
Elliott
,
W. G. H.
Harker
,
D. A.
Ritchie
, and
M. Y.
Simmons
,
Phys. Rev. B
67
,
155329
(
2003
).
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