We have investigated analytically the influence of band non-parabolicity on the quantized gate capacitance in -channel inversion layers of , , and -doped modulation field effect devices, whose channel electrons obey the three, two, and the parabolic energy band models of Kane. The quantized gate capacitance has been investigated by including the effects of electric subbands under quantum mechanical treatment on GaAs, InSb, and lattices matched to InP as channel materials. The oscillatory dependence of the quantized gate capacitance as a function of surface electric field and gate bias signatures directly the two-dimensional quantum confinement of the carriers. The influence of the band non-parabolicity of the confined carriers significantly influences the value of the gate capacitance. The result of the gate capacitances for the parabolic energy band model forms a special case of our generalized theoretical formalism.
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1 October 2008
Research Article|
October 01 2008
Influence of band non-parabolicity on the quantized gate capacitance in -doped MODFED of III–V and related materials
Sitangshu Bhattacharya;
Sitangshu Bhattacharya
a)
Nanoscale Device Research Laboratory, Centre for Electronic Design and Technology,
Indian Institute of Science
, Bangalore 560 012, India
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Surya Shankar Dan;
Surya Shankar Dan
Nanoscale Device Research Laboratory, Centre for Electronic Design and Technology,
Indian Institute of Science
, Bangalore 560 012, India
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Santanu Mahapatra
Santanu Mahapatra
Nanoscale Device Research Laboratory, Centre for Electronic Design and Technology,
Indian Institute of Science
, Bangalore 560 012, India
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a)
Electronic mail: isbsin@yahoo.co.in
J. Appl. Phys. 104, 074304 (2008)
Article history
Received:
June 08 2008
Accepted:
July 29 2008
Citation
Sitangshu Bhattacharya, Surya Shankar Dan, Santanu Mahapatra; Influence of band non-parabolicity on the quantized gate capacitance in -doped MODFED of III–V and related materials. J. Appl. Phys. 1 October 2008; 104 (7): 074304. https://doi.org/10.1063/1.2986154
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