We report the effect of changing the polarity of a magnetic field parallel to the surface plane of GaAs/AlGaAs modulation-doped heterostructures (MDHs) with various spacer thicknesses on the terahertz radiation power and its spectral characteristics. Results show that flipping the direction of the transverse 1 T magnetic field modifies the extent of field-induced terahertz radiation enhancement. The observations are analyzed in the context of junction electric field strength, carrier confinement and mobility, and the AlGaAs/GaAs interface roughness. This terahertz method may prove as an efficient tool to qualitatively evaluate the characteristics of MDH layers.
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