Thermal management of high power semiconductor lasers is challenging due to the low thermal conductivity of the laser substrate and the active device layers. In this work, we demonstrate the use of a microfabricated laser test device to study the thermal management of edge emitting semiconductor lasers. In this device, metallic heat spreaders of high thermal conductivity are directly electroplated on structures that mimic edge-emitting semiconductor lasers. The effects of various structural parameters of the heat spreader on the reduction of the thermal resistance of the laser test device are demonstrated both experimentally and theoretically. Without resolving to computational costive simulations, we developed two independent analytical models to verify the experimental data and further utilized them to identify the dominant thermal resistance under different laser mounting configurations. We believe our approach here of using microfabricated devices to mimic thermal characteristics of lasers as well as the developed analytical models for calculating the laser thermal resistance under different mounting configurations can potentially become valuable tools for thermal management of high power semiconductor lasers.
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15 September 2008
Research Article|
September 22 2008
Integrated electroplated heat spreaders for high power semiconductor lasers Available to Purchase
Jianping Fu;
Jianping Fu
a)
1Department of Mechanical Engineering,
Massachusetts Institute of Technology
, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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Ronggui Yang;
Ronggui Yang
b)
1Department of Mechanical Engineering,
Massachusetts Institute of Technology
, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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Gang Chen;
Gang Chen
c)
1Department of Mechanical Engineering,
Massachusetts Institute of Technology
, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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Jean Pierre Fleurial;
Jean Pierre Fleurial
2
Jet Propulsion Laboratory
, 4800 Oak Grove Drive, Pasadena, California 91109, USA
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G. Jeffrey Snyder
G. Jeffrey Snyder
2
Jet Propulsion Laboratory
, 4800 Oak Grove Drive, Pasadena, California 91109, USA
Search for other works by this author on:
Jianping Fu
1,a)
Ronggui Yang
1,b)
Gang Chen
1,c)
Jean Pierre Fleurial
2
G. Jeffrey Snyder
2
1Department of Mechanical Engineering,
Massachusetts Institute of Technology
, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
2
Jet Propulsion Laboratory
, 4800 Oak Grove Drive, Pasadena, California 91109, USA
a)
Present address: Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA.
b)
Present address: Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, CO 80309, USA.
c)
Author to whom correspondence should be addressed. Tel.: +1 (617) 253-0006. FAX: +1 (617) 258-5802. Electronic mail: [email protected].
J. Appl. Phys. 104, 064907 (2008)
Article history
Received:
June 09 2008
Accepted:
August 03 2008
Citation
Jianping Fu, Ronggui Yang, Gang Chen, Jean Pierre Fleurial, G. Jeffrey Snyder; Integrated electroplated heat spreaders for high power semiconductor lasers. J. Appl. Phys. 15 September 2008; 104 (6): 064907. https://doi.org/10.1063/1.2986888
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