Tetragonal Nb-doped (PNZT) films with a lead oxide seeding layer were deposited on the substrates by sol-gel processing. The as-grown PNZT films with thicknesses ranging from about 0.08 to show highly -axis preferential orientation, and their ferroelectric and piezoelectric properties improved with increasing film thickness. Due to the combined effects of Nb doping and -axis texturing as well as reduced substrate constraint, a high constant up to 196 pm/V was obtained for PNZT film at in addition to a large remnant polarization of . This well -axis-oriented PNZT films on platinized Si with a high piezoresponse are suitable for the fabrication of microelectromechanical devices.
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