We synthesized solid solution by the high pressure and temperature method. With regard to the temperature dependence of the dielectric permittivity, the three anomalies corresponding to the three phase transitions of merged with the increase in , and only one peak was observed for . The variation in with the composition, , of was approximately for , which is almost the same as and larger than that of the and (, Sn, Hf, and Ce) solid solutions, respectively. This result indicates that the phase transition temperature is significantly affected by the substitution with F ion. Furthermore, it was found that the is an ideal relaxor and that the remnant polarization is at 70 K, which is comparable to that of . However, the of ( at 100 kHz) was smaller than that of the -site ion-substituted relaxors: and . Since the remnant polarization of at 70 K was comparable to that of at 175 K, the small of is found to be due to the decrease in the dielectric permittivity in the paraelectric region.
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15 August 2008
Research Article|
August 18 2008
Structure and dielectric properties of high-pressure perovskite-type oxyfluorides Available to Purchase
Tetsuhiro Katsumata;
Tetsuhiro Katsumata
a)
1Department of Chemistry, Faculty of Science,
Gakushuin University
, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan
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Hiroshi Umemoto;
Hiroshi Umemoto
1Department of Chemistry, Faculty of Science,
Gakushuin University
, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan
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Yoshiyuki Inaguma;
Yoshiyuki Inaguma
1Department of Chemistry, Faculty of Science,
Gakushuin University
, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan
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Desheng Fu;
Desheng Fu
2Materials and Structures Laboratory,
Tokyo Institute of Technology
, 4259 Nagatsuta, Yokohama 226-8503, Japan
3ERATO,
Japan Science and Technology Agency
, 3-5 Sanbanchou, Chiyoda-ku, Tokyo 102-0075, Japan
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Mitsuru Itoh
Mitsuru Itoh
2Materials and Structures Laboratory,
Tokyo Institute of Technology
, 4259 Nagatsuta, Yokohama 226-8503, Japan
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Tetsuhiro Katsumata
1,a)
Hiroshi Umemoto
1
Yoshiyuki Inaguma
1
Desheng Fu
2,3
Mitsuru Itoh
2
1Department of Chemistry, Faculty of Science,
Gakushuin University
, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan
2Materials and Structures Laboratory,
Tokyo Institute of Technology
, 4259 Nagatsuta, Yokohama 226-8503, Japan
3ERATO,
Japan Science and Technology Agency
, 3-5 Sanbanchou, Chiyoda-ku, Tokyo 102-0075, Japan
a)
Electronic mail: [email protected].
J. Appl. Phys. 104, 044101 (2008)
Article history
Received:
April 15 2008
Accepted:
June 12 2008
Citation
Tetsuhiro Katsumata, Hiroshi Umemoto, Yoshiyuki Inaguma, Desheng Fu, Mitsuru Itoh; Structure and dielectric properties of high-pressure perovskite-type oxyfluorides . J. Appl. Phys. 15 August 2008; 104 (4): 044101. https://doi.org/10.1063/1.2968246
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