This contribution reports the metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots with a voluntary V-alloying obtained owing to an additional phosphine flux during InAs quantum dot growth. The quantum dots were studied by photoluminescence and transmission electron microscopy. We show that the additional phosphine flux allows to tune quantum dot emission around while improving their optical properties. The comparison of the optical and structural properties of the InAsP quantum dots allows to deduce their phosphorus composition, ranging from 0% to 30% when the phosphine/arsine flow ratio is varying between 0 and 50. On the basis of the compositions deduced, we discuss on the effects of the phosphine flow and of the alloying on the quantum dot growth, structural, and optical properties.
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15 August 2008
Research Article|
August 19 2008
Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for applications: Growth, structural, and optical properties Available to Purchase
A. Michon;
A. Michon
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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R. Hostein;
R. Hostein
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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G. Patriarche;
G. Patriarche
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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N. Gogneau;
N. Gogneau
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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G. Beaudoin;
G. Beaudoin
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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A. Beveratos;
A. Beveratos
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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I. Robert-Philip;
I. Robert-Philip
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
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S. Laurent;
S. Laurent
2Institut d’Electronique Fondamentale, IEF/UMR8622—CNRS Bâtiment 220,
Université Paris Sud
, 91405 Orsay, France
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S. Sauvage;
S. Sauvage
2Institut d’Electronique Fondamentale, IEF/UMR8622—CNRS Bâtiment 220,
Université Paris Sud
, 91405 Orsay, France
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P. Boucaud;
P. Boucaud
2Institut d’Electronique Fondamentale, IEF/UMR8622—CNRS Bâtiment 220,
Université Paris Sud
, 91405 Orsay, France
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A. Michon
1
R. Hostein
1
G. Patriarche
1
N. Gogneau
1
G. Beaudoin
1
A. Beveratos
1
I. Robert-Philip
1
S. Laurent
2
S. Sauvage
2
P. Boucaud
2
I. Sagnes
1,a)
1
Laboratoire de Photonique et de Nanostructures
, LPN/UPR20—CNRS Route de Nozay
, 91460 Marcoussis, France
2Institut d’Electronique Fondamentale, IEF/UMR8622—CNRS Bâtiment 220,
Université Paris Sud
, 91405 Orsay, France
a)
Electronic mail: [email protected].
J. Appl. Phys. 104, 043504 (2008)
Article history
Received:
February 28 2008
Accepted:
June 18 2008
Citation
A. Michon, R. Hostein, G. Patriarche, N. Gogneau, G. Beaudoin, A. Beveratos, I. Robert-Philip, S. Laurent, S. Sauvage, P. Boucaud, I. Sagnes; Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for applications: Growth, structural, and optical properties. J. Appl. Phys. 15 August 2008; 104 (4): 043504. https://doi.org/10.1063/1.2968338
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