Type-II InGaN–GaNAs quantum wells (QWs) with thin dilute-As GaNAs layer are analyzed self-consistently as improved III-nitride gain media for diode lasers. The band structure is calculated by using a six-band formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The type-II InGaN–GaNAs QW structure allows large electron-hole wave function overlap by confining the hole wave function in the GaNAs layer of the QW. The findings based on self-consistent analysis indicate that type-II InGaN-GaNAs QW active region results in superior performance for laser diodes, in comparison to that of conventional InGaN QW. Both the spontaneous emission radiative recombination rate and optical gain of type-II InGaN–GaNAs QW structure are significantly enhanced. Reduction in the threshold current density of InGaN–GaNAs QW lasers is also predicted.
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15 August 2008
Research Article|
August 27 2008
Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers Available to Purchase
Hongping Zhao;
Hongping Zhao
a)
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
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Ronald A. Arif;
Ronald A. Arif
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
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Nelson Tansu
Nelson Tansu
b)
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
Search for other works by this author on:
Hongping Zhao
a)
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
Ronald A. Arif
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
Nelson Tansu
b)
Center for Optical Technologies, Department of Electrical and Computer Engineering,
Lehigh University
, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA
a)
Electronic mail: [email protected].
b)
Electronic mail: [email protected].
J. Appl. Phys. 104, 043104 (2008)
Article history
Received:
May 26 2008
Accepted:
June 18 2008
Citation
Hongping Zhao, Ronald A. Arif, Nelson Tansu; Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers. J. Appl. Phys. 15 August 2008; 104 (4): 043104. https://doi.org/10.1063/1.2970107
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