Vitreous thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u , , , , and ). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to . The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power , independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for . The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.
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15 July 2008
Research Article|
July 21 2008
Nanoporous thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability
A. Dallanora;
A. Dallanora
1Faculty of Physics,
Catholic University of Rio Grande do Sul
, Av. Ipiranga 6681, 90619-900 Porto Alegre, Brazil
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T. L. Marcondes;
T. L. Marcondes
2Department of Metalurgy, Engineering School,
Federal University of Rio Grande do Sul
, Av. Bento Gonçalves 9500, 91501–970 Porto Alegre, Brazil
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G. G. Bermudez;
G. G. Bermudez
3Laboratório Tandar,
CNEA
, 1429 Buenos Aires, Argentina
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P. F. P. Fichtner;
P. F. P. Fichtner
2Department of Metalurgy, Engineering School,
Federal University of Rio Grande do Sul
, Av. Bento Gonçalves 9500, 91501–970 Porto Alegre, Brazil
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C. Trautmann;
C. Trautmann
4
Gesellschaft für Schwerionenforschung
, Planckstr. 1, 64291 Darmstadt, Germany
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M. Toulemonde;
M. Toulemonde
5
CIMAP-ENSICAEN-CEA-CNRS-University of CAEN
, Bd H. Becquerel, BP 5133, 14070 Caen Cedex 5, France
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R. M. Papaléo
R. M. Papaléo
a)
1Faculty of Physics,
Catholic University of Rio Grande do Sul
, Av. Ipiranga 6681, 90619-900 Porto Alegre, Brazil
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a)
Electronic mail: [email protected].
J. Appl. Phys. 104, 024307 (2008)
Article history
Received:
March 05 2008
Accepted:
May 14 2008
Citation
A. Dallanora, T. L. Marcondes, G. G. Bermudez, P. F. P. Fichtner, C. Trautmann, M. Toulemonde, R. M. Papaléo; Nanoporous thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability. J. Appl. Phys. 15 July 2008; 104 (2): 024307. https://doi.org/10.1063/1.2957052
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