We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of (001) tetragonal and (001) rhombohedral on a thick (001) passive substrate as a function of the lattice misfit strain between layers and the substrate. By considering the self-strain in each layer and the indirect elastic interaction between the layers, we provide a numerical analysis of the relative domain fractions in the tetragonal layer of a and bilayer structure as a function of the tetragonal layer thickness on , , and (001) MgO. It is found that the elastic coupling between the tetragonal and rhombohedral layers leads to an excess elastic energy in the tetragonal layer, resulting in a two to three times increase in the ferroelastic domain volume fraction of the tetragonal layer compared to single-layer films of similar thickness. These results show alternate ways of engineering ferroelastic domain structures in ferroelectric thin films.
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15 December 2008
Research Article|
December 17 2008
Ferroelastic domains in bilayered ferroelectric thin films Available to Purchase
R. Mahjoub;
R. Mahjoub
1School of Materials Science and Engineering,
University of New South Wales
, Sydney, New South Wales 2052, Australia
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V. Anbusathaiah;
V. Anbusathaiah
1School of Materials Science and Engineering,
University of New South Wales
, Sydney, New South Wales 2052, Australia
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S. P. Alpay;
S. P. Alpay
a)
2Materials Science and Engineering Program and Institute of Material Science,
University of Connecticut
, Connecticut 06269, USA
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V. Nagarajan
V. Nagarajan
b)
1School of Materials Science and Engineering,
University of New South Wales
, Sydney, New South Wales 2052, Australia
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R. Mahjoub
1
V. Anbusathaiah
1
S. P. Alpay
2,a)
V. Nagarajan
1,b)
1School of Materials Science and Engineering,
University of New South Wales
, Sydney, New South Wales 2052, Australia
2Materials Science and Engineering Program and Institute of Material Science,
University of Connecticut
, Connecticut 06269, USA
a)
Electronic mail: [email protected].
b)
Author to whom correspondence should be addressed: Electronic mail: [email protected].
J. Appl. Phys. 104, 124103 (2008)
Article history
Received:
September 08 2008
Accepted:
October 31 2008
Citation
R. Mahjoub, V. Anbusathaiah, S. P. Alpay, V. Nagarajan; Ferroelastic domains in bilayered ferroelectric thin films. J. Appl. Phys. 15 December 2008; 104 (12): 124103. https://doi.org/10.1063/1.3042222
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