Electrical properties, i.e., dielectric hysteresis and leakage current, of epitaxial films with bottom electrode and different metals as top contact were investigated. The leakage current is largely insensitive to the work function of the top metal but increases with decreasing electronegativity as well as with decreasing number of electrons on the -shell of the top metal. The best rectifying properties are obtained for metals with complete -shell (Cu, Au, Ag, Pd), while the metals with few electrons on the -shell (Ta, Cr) form Ohmic-like contacts.
REFERENCES
1.
J. F.
Scott
, in Advanced Microelectronics Series
, edited by K.
Itoh
and T.
Sakurai
(Springer-Verlag
, Berlin, Heidelberg
, 2000
).2.
3.
L.
Pintilie
, I.
Vrejoiu
, D.
Hesse
, G.
LeRhun
, and M.
Alexe
, Phys. Rev. B
75
, 224113
(2007
).4.
D.
Vanderbilt
and R. D.
King-Smith
, Phys. Rev. B
48
, 4442
(1993
).5.
C. S.
Park
, S. J.
Lee
, T. W.
Kang
, and D. J.
Fu
, J. Appl. Phys.
100
, 114103
(2006
).6.
L.
Pintilie
and M.
Alexe
, J. Appl. Phys.
98
, 124103
(2005
).7.
L.
Pintilie
, I.
Vrejoiu
, D.
Hesse
, G.
LeRhun
, and M.
Alexe
, Phys. Rev. B
75
, 104103
(2007
).8.
H.
Morioka
, S.
Yokoyama
, T.
Oikawa
, H.
Funakubo
, and K.
Saito
, Appl. Phys. Lett.
85
, 3516
(2004
).9.
W. S.
Lee
, K. C.
Ahn
, C. S.
Kim
, and S. –G.
Yoon
, J. Vac. Sci. Technol. B
23
, 1901
(2005
).10.
J.
Robertson
and C. W.
Chen
, Appl. Phys. Lett.
74
, 1168
(1999
).11.
S. K.
Dey
, J. J.
Lee
, and P.
Alluri
, Jpn. J. Appl. Phys., Part 1
34
, 3142
(1995
).12.
J. F.
Scott
, Annu. Rev. Mater. Sci.
28
, 79
(1998
).13.
J. F.
Scott
, Jpn. J. Appl. Phys., Part 1
38
, 2272
(1999
).14.
I.
Vrejoiu
, G.
Le Rhun
, L.
Pintilie
, D.
Hesse
, M.
Alexe
, and U.
Goesele
, Adv. Mater. (Weinheim, Ger.)
18
, 1657
(2006
).15.
D. K.
Schroeder
, Semiconductor Material and Device Characterization
(Wiley-Interscience
, New York
, 1998
), Chaps. 2, 3, and 5.16.
C. R. C. Handbook of Chemistry and Physics
, 76th ed., edited by D. R.
Lide
(CRC
, Boca Raton
, 1995
).17.
The values obtained for Pt and Au are larger than those calculated in Ref. 10 due to the different values used for the band gap, i.e., 3.9 eV in the present study compared with 3.4 eV.
18.
S. L.
Miller
, R. D.
Nasby
, J. R.
Schwank
, M. S.
Rodgers
, and P. V.
Dressendorfer
, J. Appl. Phys.
68
, 6463
(1990
).19.
R.
Meyer
, R.
Waser
, K.
Prume
, T.
Schmitz
, and S.
Tiedke
, Appl. Phys. Lett.
86
, 142907
(2005
).20.
I.
Stolichnov
, A.
Tagantsev
, N.
Setter
, J. S.
Cross
, and M.
Tsukuda
, Appl. Phys. Lett.
75
, 1790
(1999
).21.
J. G.
Simmons
, Phys. Rev. Lett.
15
, 967
(1965
).22.
23.
A. M.
Cowley
and S. M.
Sze
, J. Appl. Phys.
36
, 3212
(1965
).24.
25.
J.
Robertson
, J. Vac. Sci. Technol. B
18
, 1785
(2000
).26.
L.
Pintilie
, I.
Vrejoiu
, G.
LeRhun
, and M.
Alexe
, J. Appl. Phys.
101
, 064109
(2007
).27.
W.
Mönch
, J. Vac. Sci. Technol. B
17
, 1867
(1999
).28.
J. G.
Dickson
, L.
Katz
, and R.
Ward
, J. Am. Chem. Soc.
83
, 3026
(1961
).29.
S. J.
Tauster
, S. C.
Fung
, and R. L.
Garten
, J. Am. Chem. Soc.
100
, 170
(1978
).30.
R. E.
Cohen
, Nature (London)
358
, 136
(1992
).31.
C.
Yoshida
, A.
Yoshida
, and H.
Tamura
, Appl. Phys. Lett.
75
, 1449
(1999
).32.
H.
Over
, Y. D.
Kim
, A. P.
Setsonen
, S.
Wendt
, E.
Lundgren
, M.
Schmid
, P.
Varga
, A.
Morgante
, and G.
Ertl
, Science
287
, 1474
(2000
).33.
A. J.
Hartmann
, M.
Neilson
, R. N.
Lamb
, K.
Watanabe
, and J. F.
Scott
, Appl. Phys. A: Mater. Sci. Process.
70
, 239
(2000
).34.
A.
Soon
, M.
Todorova
, B.
Delley
, and C.
Stampfl
, Phys. Rev. B
75
, 125420
(2007
).35.
M.
Nunez
and M. B.
Nardelli
, Phys. Rev. B
73
, 235422
(2006
).36.
A. I.
Kingon
and S.
Srinivasan
, Nature Mater.
4
, 233
(2005
).© 2008 American Institute of Physics.
2008
American Institute of Physics
You do not currently have access to this content.