We report our work on fabricating lithographically aligned patterned backgates on thin III-V semiconductor samples using single sided mask aligners only. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infrared light emitting diodes and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyze the variation in the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilize the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15 nm wide. In both cases, the densities can be matched by using appropriate bias voltages.
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1 December 2008
Research Article|
December 08 2008
Patterned backgating using single-sided mask aligners: Application to density-matched electron-hole bilayers Available to Purchase
A. F. Croxall;
A. F. Croxall
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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K. Das Gupta;
K. Das Gupta
a)
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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C. A. Nicoll;
C. A. Nicoll
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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M. Thangaraj;
M. Thangaraj
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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I. Farrer;
I. Farrer
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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D. A. Ritchie;
D. A. Ritchie
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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M. Pepper
M. Pepper
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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A. F. Croxall
K. Das Gupta
a)
C. A. Nicoll
M. Thangaraj
I. Farrer
D. A. Ritchie
M. Pepper
Cavendish Laboratory,
University of Cambridge
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
a)
Electronic mail: [email protected].
J. Appl. Phys. 104, 113715 (2008)
Article history
Received:
May 22 2008
Accepted:
October 14 2008
Citation
A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, I. Farrer, D. A. Ritchie, M. Pepper; Patterned backgating using single-sided mask aligners: Application to density-matched electron-hole bilayers. J. Appl. Phys. 1 December 2008; 104 (11): 113715. https://doi.org/10.1063/1.3032942
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