The pseudobinary system has, over almost its entire composition range, two kinds of crystalline phase: one is a metastable phase with a NaCl-type structure and the other is a spectrum of stable phases with homologous structures. In the metastable phase, Ge/Sb atoms and intrinsic vacancies occupy the Na sites; on the other hand, Te atoms are located at the Cl sites. These vacancies are produced by following to ensure the stoichiometry of the metastable pseudobinary compound. This metastable phase obstinately holds its NaCl-type structure and resists transformation to stable homologous structures, even at high temperatures on the GeTe-rich side of the system. In GeTe , the NaCl-type atomic configuration itself is the stable structure. GeTe has, as is well known, a high-temperature cubic phase and a low-temperature rhombohedral phase. This GeTe and the pseudobinary compounds containing a small quantity of have their single-phase regions not on the tie line but at Ge-poor sides off the line: in other words, the Na sites of these off-stoichiometric compounds have some excess vacancies besides the intrinsic vacancies. As is further added to GeTe, however, the structural transformation temperature continuously falls and the single-phase region converges on the tie line as the excess vacancies at the Na site disappear, which change its electrical property from metallic to semiconducting conductivity. The low-temperature rhombohedral phase is present up to near . The NaCl-type metastable phase becomes unstable with increased ; after subjecting the compound to heat treatment for 15 days at 773 K, a stable homologous structure appeared.
Skip Nav Destination
,
,
,
,
,
,
,
,
,
,
Article navigation
1 May 2008
Research Article|
May 05 2008
Structural characteristics of GeTe-rich pseudobinary metastable crystals
T. Matsunaga;
T. Matsunaga
a)
1Materials Science and Analysis Technology Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
Search for other works by this author on:
H. Morita;
H. Morita
1Materials Science and Analysis Technology Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
Search for other works by this author on:
R. Kojima;
R. Kojima
2AV Core Technology Development Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
Search for other works by this author on:
N. Yamada;
N. Yamada
2AV Core Technology Development Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
Search for other works by this author on:
K. Kifune;
K. Kifune
3Faculty of Liberal Arts and Sciences,
Osaka Prefecture University
, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
Search for other works by this author on:
Y. Kubota;
Y. Kubota
4Graduate School of Science,
Osaka Prefecture University
, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
Search for other works by this author on:
Y. Tabata;
Y. Tabata
5Graduate School of Science,
Osaka University
, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan
Search for other works by this author on:
J.-J. Kim;
J.-J. Kim
6
Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Search for other works by this author on:
M. Kobata;
M. Kobata
6
Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Search for other works by this author on:
E. Ikenaga;
E. Ikenaga
6
Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Search for other works by this author on:
K. Kobayashi
K. Kobayashi
6
Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Search for other works by this author on:
T. Matsunaga
1,a)
H. Morita
1
R. Kojima
2
N. Yamada
2
K. Kifune
3
Y. Kubota
4
Y. Tabata
5
J.-J. Kim
6
M. Kobata
6
E. Ikenaga
6
K. Kobayashi
6
1Materials Science and Analysis Technology Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
2AV Core Technology Development Center,
Matsushita Electric Industrial Co., Ltd.
, 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan
3Faculty of Liberal Arts and Sciences,
Osaka Prefecture University
, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
4Graduate School of Science,
Osaka Prefecture University
, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
5Graduate School of Science,
Osaka University
, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan
6
Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]. Also at Characterization Technology Group, Matsushita Technoresearch, Inc., 3-1-1 Yagumo-nakamachi, Moriguchi, Osaka 570-8501, Japan.
J. Appl. Phys. 103, 093511 (2008)
Article history
Received:
October 13 2007
Accepted:
January 25 2008
Citation
T. Matsunaga, H. Morita, R. Kojima, N. Yamada, K. Kifune, Y. Kubota, Y. Tabata, J.-J. Kim, M. Kobata, E. Ikenaga, K. Kobayashi; Structural characteristics of GeTe-rich pseudobinary metastable crystals. J. Appl. Phys. 1 May 2008; 103 (9): 093511. https://doi.org/10.1063/1.2901187
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Phase-change materials and their applications
Nelson Sepúlveda, Yunqi Cao
Decoding diffraction and spectroscopy data with machine learning: A tutorial
D. Vizoso, R. Dingreville
Related Content
Optical properties of (GeTe, Sb 2 Te 3 ) pseudobinary thin films studied with spectroscopic ellipsometry
Appl. Phys. Lett. (July 2008)
Characterization of silver photodiffusion in Ge8Sb2Te11 thin films
AIP Conf. Proc. (June 2015)
Band offsets between SiO 2 and phase change materials in the ( GeTe ) x ( Sb 2 Te 3 ) 1 − x pseudobinary system
Appl. Phys. Lett. (March 2011)
Crystallization properties of materials along the pseudo-binary line between GeTe and Sb
J. Appl. Phys. (March 2014)
Temperature dependent dielectric properties of GeTe-rich (GeTe)x(Sb2Te3)1−x glass
Appl. Phys. Lett. (November 2022)