Optical absorption and emission intensities are investigated for doped into single-crystal . Room temperature absorption spectra of , representing transitions from to excited multiplet manifolds observed between 400 and 2100 nm, have been analyzed using the Judd–Ofelt (JO) model to obtain the phenomenological intensity parameters , , and . The JO intensity parameters are used to calculate the spontaneous emission probabilities, radiative lifetimes, and branching ratios of the transitions from the upper multiplet manifolds to the corresponding lower-lying multiplet manifolds of . The room temperature fluorescence spectrum in the near infrared region is reported between 850 and 1550 nm. The emission cross section for the intermanifold transition, has been determined. The 8 K absorption spectrum was examined as well. The detailed structure observed in the absorption bands , , , and , was analyzed in terms of the crystal-field splitting of each manifold using a charge-compensation model first developed for doped into . The optical and spectroscopic characteristics of demonstrate that this material has potential as a laser host system at various wavelengths.
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1 May 2008
Research Article|
May 12 2008
Intensity analysis and crystal-field modeling of in host
Dhiraj K. Sardar;
Dhiraj K. Sardar
a)
1Department of Physics and Astronomy,
University of Texas at San Antonio
, San Antonio, Texas 78249-0697, USA
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Sree R. Chandrasekharan;
Sree R. Chandrasekharan
1Department of Physics and Astronomy,
University of Texas at San Antonio
, San Antonio, Texas 78249-0697, USA
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Kelly L. Nash;
Kelly L. Nash
1Department of Physics and Astronomy,
University of Texas at San Antonio
, San Antonio, Texas 78249-0697, USA
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John B. Gruber;
John B. Gruber
1Department of Physics and Astronomy,
University of Texas at San Antonio
, San Antonio, Texas 78249-0697, USA
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Arnold Burger;
Arnold Burger
2Department of Physics, Center for Photonic Materials and Devices,
Fisk University
, Nashville, Tennessee 37208-3051, USA
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Utpal N. Roy
Utpal N. Roy
2Department of Physics, Center for Photonic Materials and Devices,
Fisk University
, Nashville, Tennessee 37208-3051, USA
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a)
Author to whom correspondence should be addressed. Electronic mail: dsardar@utsa.edu.
J. Appl. Phys. 103, 093112 (2008)
Article history
Received:
February 08 2008
Accepted:
March 05 2008
Citation
Dhiraj K. Sardar, Sree R. Chandrasekharan, Kelly L. Nash, John B. Gruber, Arnold Burger, Utpal N. Roy; Intensity analysis and crystal-field modeling of in host. J. Appl. Phys. 1 May 2008; 103 (9): 093112. https://doi.org/10.1063/1.2919765
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