High- gate dielectric films were prepared by reactive sputtering. The effects of postdeposition annealing on the structure and optical properties of films have been investigated. The x-ray diffraction result shows that the crystallization starts at the annealing temperature of . Spectroscopic ellipsometry was employed to determine the optical properties of a set of films annealed at various temperatures. It was found that the refractive index of films decreased with the increase of annealing temperature below , whereas it increased with increasing annealing temperature above . The annealing-temperature dependence of the optical band gap of films was also discussed in detail. It has indicated that the optical band gap of films shifts to higher energy after higher temperature annealing, which is likely due to the reduction of N content and the change of crystalline structure in films.
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15 March 2008
Research Article|
March 17 2008
Effects of postdeposition annealing on the structure and optical properties of films
X. J. Wang;
X. J. Wang
a)
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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L. D. Zhang;
L. D. Zhang
b)
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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G. He;
G. He
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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J. P. Zhang;
J. P. Zhang
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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M. Liu;
M. Liu
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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L. Q. Zhu
L. Q. Zhu
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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a)
Electronic mail: [email protected].
b)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 103, 064101 (2008)
Article history
Received:
September 06 2007
Accepted:
January 05 2008
Citation
X. J. Wang, L. D. Zhang, G. He, J. P. Zhang, M. Liu, L. Q. Zhu; Effects of postdeposition annealing on the structure and optical properties of films. J. Appl. Phys. 15 March 2008; 103 (6): 064101. https://doi.org/10.1063/1.2890987
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