We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.

1.
S. J. C.
Irvine
, in
Narrow Gap Cadmium-Based Compounds
, edited by
P.
Capper
(
INSPEC, the Institution of Electrical Engineers
,
London
,
1994
), pp.
386
396
;
N.
Magnea
and
J. L.
Pautrat
, ibid., pp.
441
445
.
2.
P.
Fernández
,
J. Optoelectron. Adv. Mater.
5
,
369
(
2003
).
3.
J.
Rams
,
N. V.
Sochinskii
,
V.
Muñoz
, and
J. M.
Cabrera
,
Appl. Phys. A: Mater. Sci. Process.
71
,
277
(
2000
).
4.
P.
Fernández
,
J.
Piqueras
,
N. V.
Sochinskii
,
V.
Muñoz
, and
S.
Bernardi
,
Appl. Phys. Lett.
71
,
3096
(
1997
).
5.
E.
Alves
,
M. F.
da Silva
,
J. C.
Soares
,
N. V.
Sochinskii
, and
S.
Bernardi
,
Nucl. Instrum. Methods Phys. Res. B
136–138
,
220
(
1998
).
6.
N. V.
Sochinskii
,
E.
Diéguez
,
E.
Alves
,
M. F.
da Silva
,
J. C.
Soares
,
S.
Bernardi
,
J.
Garrido
, and
F.
Agulló-Rueda
,
Semicond. Sci. Technol.
11
,
248
(
1996
).
7.
N. V.
Sochinskii
,
V.
Muñoz
,
V.
Bellani
,
L.
Viña
,
E.
Diéguez
,
E.
Alves
,
M. F.
da Silva
,
J. C.
Soares
, and
S.
Bernardi
,
Appl. Phys. Lett.
70
,
1314
(
1997
).
8.
N. V.
Sochinskii
,
C.
Reig
,
V.
Muñoz
, and
J.
Alamo
,
J. Cryst. Growth
192
,
342
(
1998
).
9.
A. R.
Alija
,
L. J.
Martínez
,
A.
García-Martín
,
M. L.
Dotor
,
D.
Golmayo
, and
P. A.
Postigo
,
Appl. Phys. Lett.
86
,
141101
(
2005
).
10.
J. M.
Francou
,
K.
Saminadayar
, and
J. L.
Pautrat
,
Phys. Rev. B
41
,
12035
(
1990
).
11.
E.
Molva
,
J. L.
Pautrat
,
K.
Saminadayar
,
G.
Milchberg
, and
N.
Magnes
,
Phys. Rev. B
30
,
3344
(
1984
).
12.
J.
Lee
,
N. C.
Giles
, and
C. J.
Summers
,
Phys. Rev. B
49
,
11459
(
1994
).
13.
N. D.
Vakhnyak
,
S. G.
Krylyuk
,
Yu. V.
Kryuchenko
, and
I. M.
Kupchak
,
Semicond. Phys., Quantum Electron. Optoelectron.
5
,
25
(
2002
).
14.
M.
Soltani
,
M.
Certier
,
R.
Evrard
, and
E.
Kartheuser
,
J. Appl. Phys.
78
,
5626
(
1995
).
You do not currently have access to this content.