Leakage currents determine bumps in the capacitance-voltage characteristics of metal-oxide-semiconductor-type heterostructures with capacitance values larger than the insulator capacitance. A nearly parallel shift with frequency is also observed. These aspects are connected with the presence of a high density of interface states. We illustrate these effects for the case of nano-PbSSiO2Si heterostructures. The phenomena were simulated and we propose a method to quickly estimate the interface state density level of a heterostructure when leakage channels are present.

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