Leakage currents determine bumps in the capacitance-voltage characteristics of metal-oxide-semiconductor-type heterostructures with capacitance values larger than the insulator capacitance. A nearly parallel shift with frequency is also observed. These aspects are connected with the presence of a high density of interface states. We illustrate these effects for the case of nano- heterostructures. The phenomena were simulated and we propose a method to quickly estimate the interface state density level of a heterostructure when leakage channels are present.
Capacitance-voltage characteristics of heterostructures with high leakage currents
A. Goldenblum, V. Stancu, M. Buda, G. Iordache, I. Pintilie, C. Negrila, T. Botila; Capacitance-voltage characteristics of heterostructures with high leakage currents. J. Appl. Phys. 1 March 2008; 103 (5): 056107. https://doi.org/10.1063/1.2844210
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