The effects of tetrafluoromethane plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to . The increase in indium can be explained by an oxygen deficiency in the plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.
REFERENCES
1.
J. H.
Burroughes
, D. D. C.
Bradley
, A. R.
Brown
, R. N.
Marks
, K.
Mackey
, R. H.
Friend
, P. L.
Burn
, and A. B.
Holmes
, Nature (London)
347
, 539
(1990
).2.
D.
Braun
and A. J.
Heeger
, Appl. Phys. Lett.
58
, 1982
(1991
).3.
C. C.
Wu
, C. I.
Wu
, J. C.
Sturm
, and A.
Kahn
, Appl. Phys. Lett.
70
, 1348
(1997
).4.
I.
Chan
and C.
Hong
, Thin Solid Films
444
, 254
(2003
).5.
S. K.
So
, W. K.
Choi
, C. H.
Cheng
, L. M.
Leung
, and C. F.
Kwong
, Appl. Phys. A: Mater. Sci. Process.
68
, 447
(1999
).6.
F.
Nuesch
, L. J.
Rothberg
, E. W.
Forsythe
, Q. T.
Le
, and Y.
Gao
, Appl. Phys. Lett.
74
, 880
(1999
).7.
R. A.
Hatton
, S. R.
Day
, M. A.
Chesters
, and M. R.
Willis
, Thin Solid Films
394
, 291
(2001
).8.
S. A.
van Slyke
, C. H.
Chen
, and C. W.
Tang
, Appl. Phys. Lett.
69
, 2160
(1996
).9.
J.
Shi
and C. W.
Tang
, Appl. Phys. Lett.
70
, 1665
(1997
).10.
S. A.
Carter
, J. C.
Scott
, and P. J.
Brock
, Appl. Phys. Lett.
71
, 1145
(1997
).11.
A. R.
Schlatmann
, D.
Wilms Floet
, A.
Hilberer
, F.
Garten
, P. J. M.
Smulders
, T. M.
Klapwijk
, and G.
Hadziioannou
, Appl. Phys. Lett.
69
, 1764
(1996
).12.
L.
Ke
, R. S.
Kumar
, K.
Zhang
, S. J.
Chua
, and A. T. S.
Wee
, Synth. Met.
140
, 295
(2004
).13.
D. R.
Lide
, CRC Handbook of Chemistry and Physics
, 80th ed. (CRC
, Boca Raton, FL
, 2000
).14.
I. D.
Parker
, J. Appl. Phys.
75
, 1656
(1994
).15.
S. J.
Jo
, S. M.
Jeong
, W. J.
Kim
, W. H.
Koo
, S. H.
Choi
, C. S.
Kim
, S. J.
Lee
, and H. K.
Baik
, J. Vac. Sci. Technol. A
23
, 1367
(2005
).16.
M. P.
de Jong
, L. J.
van IJzendoorn
, and M. J. A.
de Voigt
, Appl. Phys. Lett.
77
, 2255
(2000
).17.
K. W.
Wong
, H. L.
Yip
, Y.
Luo
, K. Y.
Wong
, W. M.
Lau
, K. H.
Low
, H. F.
Chow
, Z. Q.
Gao
, W. L.
Yeung
, and C. C.
Chang
, Appl. Phys. Lett.
80
, 2788
(2002
).18.
S. J.
Jo
, C. S.
Kim
, S. Y.
Ryu
, J. B.
Kim
, J. H.
Noh
, S. J.
Lee
, and H. K.
Baik
, Jpn. J. Appl. Phys., Part 1
46
, 6814
(2007
).19.
S. T.
Lee
, Z. Q.
Gao
, and L. S.
Hung
, Appl. Phys. Lett.
75
, 1404
(1999
).20.
C.
Chang
and S.
Chen
, Appl. Phys. Lett.
91
, 103514
(2007
).© 2008 American Institute of Physics.
2008
American Institute of Physics
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