In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample where the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.
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15 May 2008
Research Article|
May 16 2008
Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy
H. Tanoto;
H. Tanoto
a)
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Nanyang Avenue, Singapore 639798, Singapore
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S. F. Yoon;
S. F. Yoon
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Nanyang Avenue, Singapore 639798, Singapore
2
Singapore-MIT Alliance
, Nanyang Drive, Singapore 637460, Singapore
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W. K. Loke;
W. K. Loke
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Nanyang Avenue, Singapore 639798, Singapore
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K. P. Chen;
K. P. Chen
1School of Electrical and Electronic Engineering,
Nanyang Technological University
, Nanyang Avenue, Singapore 639798, Singapore
2
Singapore-MIT Alliance
, Nanyang Drive, Singapore 637460, Singapore
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E. A. Fitzgerald;
E. A. Fitzgerald
3Department of Materials Science and Engineering,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
4
Singapore-MIT Alliance
, Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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C. Dohrman;
C. Dohrman
3Department of Materials Science and Engineering,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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B. Narayanan
B. Narayanan
5
Institute of Microelectronics
, Singapore Science Park II, Singapore 117685, Singapore
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a)
Electronic mail: hendrix@pmail.ntu.edu.sg.
J. Appl. Phys. 103, 104901 (2008)
Article history
Received:
October 17 2007
Accepted:
March 10 2008
Citation
H. Tanoto, S. F. Yoon, W. K. Loke, K. P. Chen, E. A. Fitzgerald, C. Dohrman, B. Narayanan; Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy. J. Appl. Phys. 15 May 2008; 103 (10): 104901. https://doi.org/10.1063/1.2921835
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