The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a-SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.

1.
K.
Maex
,
Mater. Sci. Eng., R.
11
,
vii
(
1993
).
2.
R. T.
Tung
,
Appl. Phys. Lett.
68
,
3461
(
1996
).
3.
R. K. K.
Chong
,
M.
Yeadon
,
W. K.
Choi
,
E. A.
Stach
, and
C. B.
Boothroyd
,
Appl. Phys. Lett.
82
,
1833
(
2003
).
4.
M. L. A.
Dass
,
D. B.
Fraser
, and
C. -S.
Wei
,
Appl. Phys. Lett.
58
,
1308
(
1991
).
5.
G. B.
Kim
,
J. S.
Kwak
,
H. K.
Baik
, and
S. M.
Lee
,
J. Appl. Phys.
85
,
1503
(
1999
).
6.
C.
Detavernier
,
R. L.
Van Meirhaeghe
,
F.
Cardon
,
R. A.
Donaton
, and
K.
Maex
,
Appl. Phys. Lett.
74
,
2930
(
1999
).
7.
T.
Nguyen
,
H. L.
Ho
,
D. E.
Kotecki
, and
T. D.
Nguyen
,
J. Mater. Res.
8
,
2354
(
1993
).
8.
H. B. R.
Lee
and
H.
Kim
,
Electrochem. Solid-State Lett.
9
,
G323
(
2006
).
9.
F.
Pavlyák
,
I.
Bertóti
,
I. M.
Mohai
,
I.
Biczó
, and
J.
Giber
,
Surf. Interface Anal.
20
,
221
(
1993
).
10.
T. I.
Selinder
,
D. J.
Miller
, and
K. E.
Gray
,
Appl. Phys. Lett.
67
,
1597
(
1995
).
11.
D. K.
Sohn
,
J. -S.
Park
,
B. H.
Lee
,
J.-U.
Bae
,
J. S.
Byun
, and
J. J.
Kim
,
Appl. Phys. Lett.
73
,
2302
(
1998
).
12.
A.
Vantomme
,
S.
Degroote
,
J.
Dekoster
, and
G.
Langouche
,
J. Appl. Phys.
75
,
3882
(
1994
).
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