As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multidomain ferroelectric crystal: As one domain is expanding, the adjacent ones are contracting, leading to clamping at the domain boundaries. The piezomechanically driven surface corrugation of micron-sized domain patterns in thick crystals using large-area top electrodes is thus drastically suppressed, barely accessible by means of piezoresponse force microscopy.

1.
M. M.
Fejer
,
G. A.
Magel
,
D. H.
Jundt
, and
R. L.
Byer
,
IEEE J. Quantum Electron.
28
,
2631
(
1992
).
2.
R. W.
Eason
,
A. S.
Boyland
,
S.
Mailis
, and
P. G. R.
Smith
,
Opt. Commun.
197
,
201
(
2001
).
3.
N. G. R.
Broderick
,
G. W.
Ross
,
H. L.
Offerhaus
,
D. J.
Richardson
, and
D. C.
Hanna
,
Phys. Rev. Lett.
84
,
4345
(
2000
).
4.
Y.
Cho
,
S.
Hashimoto
,
N.
Odagawa
,
K.
Tanaka
, and
Y.
Hiranaga
,
Appl. Phys. Lett.
87
,
232907
(
2005
).
5.
E.
Soergel
,
Appl. Phys. B: Lasers Opt.
81
,
729
(
2005
).
6.
R. E.
Newnham
,
Properties of Materials
(
Oxford University Press
,
New York
,
2005
).
7.
T.
Jungk
,
Á.
Hoffmann
, and
E.
Soergel
,
Appl. Phys. Lett.
89
,
163507
(
2006
).
8.
Nanoscale Characterisation of Ferroelectric Materials
, edited by
M.
Alexe
and
A.
Gruverman
, 1st ed. (
Springer
,
Berlin
,
2004
).
9.
T.
Jungk
,
Á.
Hoffmann
, and
E.
Soergel
,
Appl. Phys. A: Mater. Sci. Process.
86
,
353
(
2007
).
10.
O.
Auciello
,
A.
Gruverman
, and
H.
Tokumoto
,
Integr. Ferroelectr.
15
,
107
(
1997
).
11.
A.
Gruverman
,
O.
Auciello
, and
H.
Tokumoto
,
Annu. Rev. Mater. Sci.
28
,
101
(
1998
).
12.
A.
Gruverman
,
B. J.
Rodriguez
,
A. I.
Kingon
,
R. J.
Nemanich
,
J. S.
Cross
, and
M.
Tsukada
,
Appl. Phys. Lett.
82
,
3071
(
2003
).
13.
S. P.
Timoshenko
and
J. M.
Goodier
,
Theory of Elasticity
, 3rd ed. (
McGraw-Hill
,
New York
,
1970
).
14.
T.
Jach
,
S.
Kim
,
V.
Gopalan
,
S.
Durbin
, and
D.
Bright
,
Phys. Rev. B
69
,
064113
(
2004
).
15.
B.
Meyer
and
D.
Vanderbilt
,
Phys. Rev. B
65
,
104111
(
2002
).
16.
M.
Foeth
,
A.
Sfera
,
P.
Stadelmann
, and
P.-A.
Buffat
,
J. Electron Microsc.
48
,
717
(
1999
).
17.
T.
Jungk
,
Á.
Hoffmann
, and
E.
Soergel
, e-print arXiv:cond-mat/0703793.
18.
T.
Jungk
,
Á.
Hoffmann
, and
E.
Soergel
,
J. Microsc.-Oxford
227
,
76
(
2007
).
19.
S. M.
Sze
,
Semiconductor Devices
, 2nd ed. (
Wiley
,
New York
,
2002
).
20.
S.
Stepanov
,
N.
Korneev
,
A.
Gerwens
, and
K.
Buse
,
Appl. Phys. Lett.
72
,
879
(
1998
).
21.
J.
Capmany
,
C. R.
Fernández-Pousa
,
E.
Diéguez
, and
V.
Bermúdez
,
Appl. Phys. Lett.
83
,
5145
(
1998
).
22.
M.
Müller
,
E.
Soergel
, and
K.
Buse
,
Appl. Phys. Lett.
83
,
1824
(
2003
).
23.
M.
Jazbinšek
and
M.
Zgonic
,
Appl. Phys. B: Lasers Opt.
74
,
407
(
2002
).
24.
U.
Jacob
,
J.
Vancea
, and
H.
Hoffmann
,
Phys. Rev. B
41
,
11852
(
1990
).
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