The introduction of hydrogen chloride (HCl) in the deposition chamber during the growth of 4H-SiC epitaxial layers allows very high growth rates to be achieved. The properties of the epilayers and the growth rate depend on many parameters such as the growth temperature and the C/Si, Cl/Si, and ratios. We have used optical and electrical measurements to investigate the effect of the Cl/Si and ratio and growth temperature on the epitaxial growth process. The growth rate increases with increasing ratio and higher growth rates are obtained when HCl is added to the gas flow. Optical microscopy shows an improvement of the surface morphology, and luminescence measurements reveal a decrease in the concentration of complex defects with increasing Cl/Si ratio in the range of 0.05–2.0 and with increasing growth temperature from to . The electrical measurements on the diodes realized on these epitaxial layers show a decrease of the leakage current with increasing Cl/Si ratio and growth temperature over the same range. Deep level transient spectroscopy measurements indicate that the deep level , which is one of the main levels responsible for the high value of leakage current measured in the Schottky diodes, is greatly reduced using HCl as a growth additive.
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15 August 2007
Research Article|
August 29 2007
Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition
L. Calcagno;
L. Calcagno
a)
Physics Department,
Catania University
, Via S. Sofia 64, 95123 Catania, Italy
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G. Izzo;
G. Izzo
Physics Department,
Catania University
, Via S. Sofia 64, 95123 Catania, Italy
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G. Litrico;
G. Litrico
Physics Department,
Catania University
, Via S. Sofia 64, 95123 Catania, Italy
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G. Foti;
G. Foti
Physics Department,
Catania University
, Via S. Sofia 64, 95123 Catania, Italy
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F. La Via;
F. La Via
CNR
-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy
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G. Galvagno;
G. Galvagno
CNR
-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy
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M. Mauceri;
M. Mauceri
Epitaxial Technology Center, c/o
BIC Sicilia
–Pantano d’Arci, 95030 Catania, Italy
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S. Leone
S. Leone
Epitaxial Technology Center, c/o
BIC Sicilia
–Pantano d’Arci, 95030 Catania, Italy
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a)
Electronic mail: [email protected]
J. Appl. Phys. 102, 043523 (2007)
Article history
Received:
March 13 2007
Accepted:
June 21 2007
Citation
L. Calcagno, G. Izzo, G. Litrico, G. Foti, F. La Via, G. Galvagno, M. Mauceri, S. Leone; Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition. J. Appl. Phys. 15 August 2007; 102 (4): 043523. https://doi.org/10.1063/1.2767248
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