Ferroelectric and magnetoresistance heterostructure (BST/LSMO) heterostructure is deposited epitaxially on substrate by pulse laser deposition. The phase structures of the BST/LSMO heterostructure are characterized by x-ray diffraction. Cross-sectional transmission electron microscope shows a substantial interdiffusision between BST and LSMO layers. The dielectric properties and conductivity of BST/LSMO heterostructure is measured as a function of temperature, frequency, and electric field. The dielectric constant dependence on electric field, vs , exhibits a strong nonlinear behavior in the temperature from 20 to 300 K, while vs relation shows a dielectric relaxor characteristic. Furthermore, the dielectric constant and the dielectric tunability are found to be similar temperature dependencies. Last, in the temperature regime where a semiconduction-type conduction became dominate, the activation thermal energy of BST/LSMO heterostructure is estimated to be 0.67 and 0.73 eV at 1 kHz and 1 MHz, respectively.
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15 April 2007
Research Article|
April 16 2007
Microstructure and dielectric relaxor properties for heterostructure
J. Miao;
J. Miao
a)
Department of Applied Physics and Materials Research Center,
The Hong Kong Polytechnic University
, Hong Kong SAR, People’s Republic of China
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H. Y. Tian;
H. Y. Tian
Department of Applied Physics and Materials Research Center,
The Hong Kong Polytechnic University
, Hong Kong SAR, People’s Republic of China
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X. Y. Zhou;
X. Y. Zhou
Department of Applied Physics and Materials Research Center,
The Hong Kong Polytechnic University
, Hong Kong SAR, People’s Republic of China
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K. H. Pang;
K. H. Pang
Department of Applied Physics and Materials Research Center,
The Hong Kong Polytechnic University
, Hong Kong SAR, People’s Republic of China
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Y. Wang
Y. Wang
Department of Applied Physics and Materials Research Center,
The Hong Kong Polytechnic University
, Hong Kong SAR, People’s Republic of China
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a)
Electronic mail: [email protected]
J. Appl. Phys. 101, 084101 (2007)
Article history
Received:
November 28 2006
Accepted:
February 25 2007
Citation
J. Miao, H. Y. Tian, X. Y. Zhou, K. H. Pang, Y. Wang; Microstructure and dielectric relaxor properties for heterostructure. J. Appl. Phys. 15 April 2007; 101 (8): 084101. https://doi.org/10.1063/1.2721393
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