The effects of thermal annealing for multiquantum wells (MQWs) have been investigated through thermally detected optical absorption. The QW transition energies have been calculated by using a ten-band model including the band anticrossing model for the description of the InGaAsN band gap variation. The modification of the In concentration profile due to In-Ga interdiffusion during thermal annealing is taken into account through the Fick law. A good agreement is obtained between calculated and experimental energies of optical transitions. Our results show that the In-Ga interdiffusion phenomenon observed in a nitrogen free sample is moderately enhanced by the introduction of nitrogen. The blueshift of optical transitions induced by the annealing process is the result of both In-Ga interdiffusion and rearrangement of local nitrogen environment.
Annealing effects on quantum wells analyzed using thermally detected optical absorption and ten band calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies, J. Y. Duboz; Annealing effects on quantum wells analyzed using thermally detected optical absorption and ten band calculations. J. Appl. Phys. 1 April 2007; 101 (7): 073510. https://doi.org/10.1063/1.2719289
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