High permittivity hafnium titanate thin films deposited by chemical vapor deposition have been studied systematically as gate insulators. The electrical and physical characteristics of the films were analyzed using a variety of techniques. It was observed that the films with higher Ti content are more resistant to crystallization when subjected to high temperature annealing. The capacitance-voltage curves for devices with hafnium titanate displayed relatively low (50mV) hysteresis. When the concentration of Hf is comparable to the concentration of Ti, both the interfacial layer equivalent oxide thickness and permittivity of HfxTi1xO2 increase linearly with increasing Ti content. The sample with higher Hf content showed weaker temperature dependence of the current. In metal-oxide-semiconductor field-effect transistor devices with hafnium titanate films, normal transistor characteristics were observed. The devices exhibited electron mobility degradation. The thermodynamic stability of stoichiometric films in contact with Si was also studied.

1.
S. J.
Lee
,
H. F.
Luan
,
W. P.
Bai
,
C. H.
Lee
,
T. S.
Jeon
,
Y.
Senzaki
,
D.
Roberts
, and
D. L.
Kwong
,
Tech. Dig. - Int. Electron Devices Meet.
31
(
2000
).
2.
S.
Sayan
,
S.
Aravamudhan
,
B. W.
Busch
,
W. H.
Schulte
,
F.
Cosandey
,
G. D.
Wilk
,
T.
Gustafsson
, and
E.
Garfunkel
,
J. Vac. Sci. Technol. A
20
,
507
(
2002
).
3.
T.
Ma
,
S. A.
Campbell
,
R.
Smith
,
N.
Hoilien
,
B.
He
 et al.,
IEEE Trans. Electron Devices
37
,
2348
(
2001
).
4.
V. V.
Afanas’ev
,
A.
Stesmans
,
F.
Chen
,
M.
Li
, and
S. A.
Campbell
,
J. Appl. Phys.
95
,
7936
(
2004
).
5.
H. D.
Kim
,
Y.
Roh
,
Y.
Lee
,
J. E.
Lee
,
D.
Jung
, and
N.-E.
Lee
,
J. Vac. Sci. Technol. A
22
,
1347
(
2004
).
6.
G. D.
Wilk
,
M. L.
Green
,
M.-Y.
Ho
,
B. W.
Busch
,
T. W.
Sorsch
 et al., Symposium on VLSI Circuits: Digest of Technical Papers
2002
,
88
.
7.
W.
Zhu
,
T. P.
Ma
,
T.
Tamagawa
,
Y.
Di
,
J.
Kim
,
R.
Carruthers
,
M.
Gibson
, and
T.
Furukawa
,
Tech. Dig. - Int. Electron Devices Meet.
463
(
2001
).
8.
M.
Gutowski
,
J. E.
Jaffe
,
C.-L.
Liu
,
M.
Stoker
,
R. I.
Hegde
,
R. S.
Rai
, and
P. J.
Tobin
,
Appl. Phys. Lett.
80
,
1897
(
2002
).
9.
E. P.
Gusev
,
E.
Cartier
,
D. A.
Buchanan
,
M.
Gribelyuk
,
M.
Copel
,
H.
Okorn-Schmidt
, and
C.
D'Emic
,
Microelectron. Eng.
59
,
341
(
2001
).
10.
J.
Robertson
,
Appl. Surf. Sci.
190
,
2
(
2002
).
11.
B. H.
Lee
,
R.
Choi
,
L.
Kang
,
S.
Gopalan
,
R.
Nieh
 et al.,
Tech. Dig. - Int. Electron Devices Meet.
2000
,
39
.
12.
J. H.
Sim
,
B. H.
Lee
,
R.
Choi
,
K.
Mattbews
,
D. L.
Kwong
,
L.
Larson
,
P.
Tsui
, and
G.
Bersuker
,
Technical Digest—Device Research Conference
,
99
(
2004
).
13.
C. S.
Kang
,
H.-J.
Cho
,
R.
Choi
,
Y.-H.
Kim
,
C. Y.
Kang
 et al.,
IEEE Trans. Electron Devices
51
,
220
(
2004
).
14.
K.
Kukli
,
J.
Ihanus
,
M.
Ritala
, and
M.
Leskela
,
Appl. Phys. Lett.
68
,
3737
(
1996
).
15.
F.
Chen
,
X.
Bin
,
C.
Hella
,
X.
Shi
,
W. L.
Gladfelter
, and
S. A.
Campbell
,
Microelectron. Eng.
72
,
263
(
2004
).
16.
M. A.
Cameron
and
S. M.
George
,
Thin Solid Films
348
,
90
(
1999
).
17.
C. J.
Taylor
,
D. C.
Gilmer
,
D. G.
Colombo
,
G. D.
Wilk
,
S. A.
Campbell
,
J.
Roberts
, and
W. L.
Gladfelter
,
J. Am. Chem. Soc.
121
,
5220
(
1999
).
18.
J. R.
Hauser
and
K.
Ahmed
,
Characterization and Metrology for ULSI Technology: 1998 International Conference
,
1998
(unpublished).
19.
J. R.
Hauser
,
IEEE Trans. Electron Devices
43
,
1981
(
1996
).
20.
M.
Li
,
Z.
Zhang
,
S. A.
Campbell
,
W. L.
Gladfelter
,
M. P.
Agustin
,
D. O.
Klenov
, and
S.
Stemmer
,
J. Appl. Phys.
98
,
054506
(
2005
).
21.
K.
Honda
,
A.
Sakai
,
M.
Sakashita
,
H.
IkedaKEDA
,
S.
Zaima
, and
Y.
Yasuda
,
Jpn. J. Appl. Phys., Part 1
43
,
1571
(
2004
).
22.
T.
Ma
(private communication).
23.
C.
Lee
,
P.
Ghosez
, and
X.
Gonze
,
Phys. Rev. B
50
,
13379
(
1994
).
24.
S. A.
Campbell
,
H.-S.
Kim
,
D. C.
Gilmer
,
B.
He
,
T.
Ma
, and
W. L.
Gladfelter
,
IBM J. Res. Dev.
43
,
383
(
1999
).
25.
M.
Lenzlinger
and
E. H.
Snow
,
J. Appl. Phys.
40
,
278
(
1969
).
26.
Z. A.
Weinberg
,
J. Appl. Phys.
53
,
5052
(
1982
).
27.
H. Y.
Yang
,
H.
Niimi
, and
G.
Lucovsky
,
J. Appl. Phys.
83
,
2327
(
1998
).
28.
S. M.
Sze
,
Physics of Semiconductor Devices
(
Wiley
,
New York
,
1981
).
29.
Z.
Xu
,
M.
Houssa
,
S. D.
Gendt
, and
M.
Heyns
,
Appl. Phys. Lett.
80
,
1975
(
2002
).
30.
M.
Houssa
,
M.
Tuominen
,
M.
Naili
,
V.
Afanas’ev
,
A.
Stesmans
,
S.
Haukka
, and
M. M.
Heyns
,
J. Appl. Phys.
87
,
8615
(
2000
).
31.
K.
Chen
,
H. C.
Warm
,
J.
Dunster
,
P. K.
Ko
,
C.
Hu
, and
M.
Yoshida
,
Solid-State Electron.
39
,
1515
(
1996
).
32.
K.
Chen
,
C.
Hu
,
P.
Fang
,
M. R.
Lin
, and
D. L.
Wollesen
,
IEEE Trans. Electron Devices
44
,
1951
(
1997
).
33.
S.
Mathew
,
L. K.
Bera
,
N.
Balasubramanian
,
M. S.
Joo
, and
B. J.
Cho
,
Thin Solid Films
462–463
,
11
(
2004
).
34.
F.
Lime
,
K.
Oshima
,
M.
Casse
,
G.
Ghibaudo
,
S.
Cristoloveanu
,
B.
Guillaumot
, and
H.
Iwai
,
Solid-State Electron.
47
,
1617
(
2003
).
You do not currently have access to this content.