Photoluminescence of Si layers grown on oxidized Si surfaces Available to Purchase

Silicon layers grown on oxidized Si surfaces at temperatures between 400 and $500°C$ exhibit intense photoluminescence (PL) in the D1 region after annealing at high temperatures (up to $1100°C$⁠). This PL is associated with structural defects that are formed due to the mechanisms of Si growth and thermal relaxation. The growth proceeds through the nucleation of epitaxial and nonepitaxial Si islands. Their coalescence occurs with the formation of a number of interfacial defects, which propagate into the Si layer as it grows. Annealing modifies the structure of the defect and makes them efficient for optical emissions. These Si structures are able to produce PL in the D1 region from thin Si layers at room temperature.