Porous silicon (PS) was irradiated by low-energy (800eV) nitrogen or argon ions. The photoluminescence (PL) properties changed significantly after irradiation, namely, PL was first quenched and then recovered as the postirradiated PS stored in air. X-ray photoelectron spectroscopy and Fourier transforms infrared spectroscopy results indicate that the Si–N bonds were formed during low-energy-nitrogen-ion irradiation, while Raman scattering spectroscopy suggests the crystal structure of PS did not change during ion irradiation. The PL quenching is due to the defects created by ion irradiation, whereas the PL recovery originates from the oxidation of Si–H back bonds and the formation of radiative recombination centers; the Si–N bonds are helpful to obtain high PL intensity.

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