We have studied the longitudinal electronic collective transport properties in a disordered array of nanocrystals (with surface density of ) embedded in Si polycrystalline matrix as a function of temperature. The system is characterized by a high degree of disorder compared to the standard disordered nanocrystal array usually studied in the literature. Despite of this fundamental difference, we demonstrate that the theoretical models used to describe the collective electronic transport in standard systems are adequate to describe the electrical behavior of such a “nonstandard” system. In particular, we show that two different conduction regimes, separated by a crossover temperature , exist: at the collective electronic transport is characterized by a Coulomb blockade phenomenon (with a positive threshold voltage) and a scaling behavior characteristic of a two-dimensional transport. Above , at low field, a thermally activated conduction mechanism is evident, and at high field the collective electron transport is again characterized by a two-dimesional scaling behavior with an effective negative threshold voltage.
Skip Nav Destination
,
,
,
Article navigation
15 January 2007
Research Article|
January 22 2007
Electronic collective transport in disordered array of -phase nanocrystals in Si
F. Ruffino;
F. Ruffino
a)
Dipartimento di Fisica e Astronomia,
Università di Catania
, via S. Sofia 64, I-95123 Catania, Italy and MATIS CNR-INFM
Search for other works by this author on:
A. M. Piro;
A. M. Piro
Dipartimento di Fisica e Astronomia,
Università di Catania
, via S. Sofia 64, I-95123 Catania, Italy and MATIS CNR-INFM
Search for other works by this author on:
G. Piccitto;
G. Piccitto
Dipartimento di Fisica e Astronomia,
Università di Catania
, via S. Sofia 64, I-95123 Catania, Italy and MATIS CNR-INFM
Search for other works by this author on:
M. G. Grimaldi
M. G. Grimaldi
Dipartimento di Fisica e Astronomia,
Università di Catania
, via S. Sofia 64, I-95123 Catania, Italy and MATIS CNR-INFM
Search for other works by this author on:
F. Ruffino
a)
A. M. Piro
G. Piccitto
M. G. Grimaldi
Dipartimento di Fisica e Astronomia,
Università di Catania
, via S. Sofia 64, I-95123 Catania, Italy and MATIS CNR-INFMa)
Electronic mail: [email protected]
J. Appl. Phys. 101, 024316 (2007)
Article history
Received:
September 11 2006
Accepted:
November 08 2006
Citation
F. Ruffino, A. M. Piro, G. Piccitto, M. G. Grimaldi; Electronic collective transport in disordered array of -phase nanocrystals in Si. J. Appl. Phys. 15 January 2007; 101 (2): 024316. https://doi.org/10.1063/1.2427108
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Related Content
Charge transport in a CoPt 3 nanocrystal microwire
Appl. Phys. Lett. (December 2004)
Simulation of charge transport in multi-island tunneling devices: Application to disordered one-dimensional systems at low and high biases
J. Appl. Phys. (September 2013)
Lateral electronic transport in 2D arrays of oxidized Si nanocrystals on quartz: Coulomb blockade effect and role of hydrogen passivation
J. Appl. Phys. (April 2011)
High-field and low-field magnetoresistances of CoFe nanoparticles elaborated by organometallic chemistry
J. Appl. Phys. (March 2008)
Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams
Appl. Phys. Lett. (September 2007)