Room temperature electron mobility in nanometer Si metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate length down to 30 nm was determined by the magnetoresistance method. A decrease of with the decrease of was observed. Monte Carlo simulations of electron transport in nanometer MOSFETs were carried out for realistic devices as a function of . The dependence with and electron concentration of simulated mobility and transmission coefficient agree with experimental data. An analysis of scattering events and time of flight gives evidence of the presence of ballistic motion in the investigated structures and proves its influence on mobility degradation in short transistors. The results give arguments that interpretation of the magnetoresistance coefficient as the square of the mobility is valid also in the case of quasiballistic electron transport.
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1 June 2007
Research Article|
June 14 2007
Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis
J. Łusakowski;
J. Łusakowski
a)
GES CNRS - URM5650,
Université Montpellier II
, 34095 Montpellier, France
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M. J. Martín Martínez;
M. J. Martín Martínez
Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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R. Rengel;
R. Rengel
Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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T. González;
T. González
Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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R. Tauk;
R. Tauk
GES CNRS - URM5650,
Universite Montpellier II
, 34095 Montpellier, France
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Y. M. Meziani;
Y. M. Meziani
GES CNRS - URM5650,
Universite Montpellier II
, 34095 Montpellier, France
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W. Knap;
W. Knap
GES CNRS - URM5650,
Universite Montpellier II
, 34095 Montpellier, France
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F. Boeuf;
F. Boeuf
ST Microelectronics
, BP 16, 38016 Crolles, France
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T. Skotnicki
T. Skotnicki
ST Microelectronics
, BP 16, 38016 Crolles, France
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a)
Also at: Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland; electronic mail: [email protected]
J. Appl. Phys. 101, 114511 (2007)
Article history
Received:
September 30 2006
Accepted:
April 11 2007
Citation
J. Łusakowski, M. J. Martín Martínez, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf, T. Skotnicki; Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis. J. Appl. Phys. 1 June 2007; 101 (11): 114511. https://doi.org/10.1063/1.2739307
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