This is a report on the fabrication and electrical characteristics of an all-organic-based thin film transistor that uses conducting poly(3,4-ethylenedioxythiophene) (PEDOT) as electrodes. The conducting PEDOT layers as source, drain, and gate electrodes were patterned by using photolithography. The poly(vinyl cinnamate) (PVCN) was spin coated and cross-linked as a gate insulator. The pentacene as an active layer was vapor deposited onto the PVCN layer. In order to compare the characteristics of the pentacene-based organic thin film transistor (OTFT) with PEDOT electrodes, we fabricated another pentacene-based OTFT using a Si-based pattern with Au electrodes. The electrical characteristics of the devices, such as charge carrier mobility , threshold voltage , and on/off current ratio , were measured from its current-voltage characteristic curves. The , , and of the pentacene-based OTFT with PEDOT electrodes were , , and , respectively. We evaluated the activation energy of the pentacene layer of the OTFT devices by analyzing the transfer characteristic curves measured in a temperature range from based on the multitrap and release model. The of the OTFT with PEDOT electrodes was measured to be , in the saturation region. This energy was larger than that of the OTFT with Au electrodes which was measured to be . However, the ’s of both OTFTs were almost the same, in spite of the relatively lower electrical conductivity of the PEDOT and the larger of the OTFT with the PEDOT electrodes. From the results of temperature dependence of current density based on the Schottky emission model, we analyze that the lower barrier height between the PEDOT electrode and the pentacene active layer resulted in easier charge injection from the PEDOT electrode into the active layer.
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15 September 2006
Research Article|
September 26 2006
Electrical characteristics of pentacene-based thin film transistor with conducting poly(3,4-ethylenedioxythiophene) electrodes
H. S. Kang;
H. S. Kang
Department of Physics,
Korea University
, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 136-713, Korea
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J. W. Lee;
J. W. Lee
Department of Physics,
Korea University
, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 136-713, Korea
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M. K. Kim;
M. K. Kim
Department of Physics,
Korea University
, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 136-713, Korea
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J. Joo;
J. Joo
a)
Department of Physics,
Korea University
, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 136-713, Korea
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J. M. Ko;
J. M. Ko
School of Applied Chemistry and Chemical Engineering,
Sungkyunkwan University
, 300 Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea
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J. Y. Lee
J. Y. Lee
School of Applied Chemistry and Chemical Engineering,
Sungkyunkwan University
, 300 Chunchun-Dong, Jangan-Gu, Suwon 440-746, Korea
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Appl. Phys. 100, 064508 (2006)
Article history
Received:
May 11 2006
Accepted:
July 18 2006
Citation
H. S. Kang, J. W. Lee, M. K. Kim, J. Joo, J. M. Ko, J. Y. Lee; Electrical characteristics of pentacene-based thin film transistor with conducting poly(3,4-ethylenedioxythiophene) electrodes. J. Appl. Phys. 15 September 2006; 100 (6): 064508. https://doi.org/10.1063/1.2349553
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