Ultraviolet and x-ray photoelectron spectroscopies were used to study electronic properties of interfaces between Au substrates and a number of organic semiconductors (small molecules and polymers). Au surface work function values before organic deposition were (exposed to air), (atomically clean), and (UV∕ozone treated). The high obtained for treated Au was due to Au oxide formation and surface-adsorbed carbon and oxygen species. Au surface morphology remained essentially unchanged by UV∕ozone exposure, as observed by atomic force microscopy. Hole injection barriers (HIBs) at interfaces between UV∕ozone treated Au and the organic semiconductors were systematically lower than those for untreated Au (both atomically clean and air exposed). Reductions in HIB of up to (for -sexiphenyl) were achieved. In addition, good long-term stability of reduced HIBs of such interfaces was observed for air storage of up to several days.
UV∕ozone treated Au for air-stable, low hole injection barrier electrodes in organic electronics
S. Rentenberger, A. Vollmer, E. Zojer, R. Schennach, N. Koch; UV∕ozone treated Au for air-stable, low hole injection barrier electrodes in organic electronics. J. Appl. Phys. 1 September 2006; 100 (5): 053701. https://doi.org/10.1063/1.2336345
Download citation file: