Hf-silicate films and Hf-silicate/ bilayers were fabricated on Si(100) to study buffer layer effects. Hf-silicate layers were grown by atomic layer chemical vapor deposition using alternate supply of tetrakis-diethylamido-hafnium and tetra--butyl-orthosilicate precursors. Ultrathin buffer layers effectively suppressed Hf-rich phases and dislocations found at Hf-silicate/Si interfaces in Hf-silicate samples. These effects resulted in the significantly improved electrical properties of bilayers, compared to Hf-silicate films, such as low leakage current density , low flatband voltage shift, and high breakdown voltage .
REFERENCES
1.
G. D.
Wilk
, R. M.
Wallance
, and J.
Anthony
, J. Appl. Phys.
89
, 5243
(2001
).2.
H.
Takeuchi
and T. J.
King
, Appl. Phys. Lett.
83
, 788
(2003
).3.
G.
Rayner
, J.
Kang
, Y.
Zhang
, and G.
Lucovsky
, J. Vac. Sci. Technol. B
20
, 1748
(2002
).4.
J.
Kim
and K.
Yong
, J. Cryst. Growth
263
, 442
(2004
).5.
J. F.
Conley
, Jr., Y.
Ono
, D. J.
Tweet
, W.
Zhuang
, and R.
Solanki
, J. Appl. Phys.
93
, 712
(2003
).6.
D. A.
Neumayer
and E.
Cartier
, J. Appl. Phys.
90
, 1801
(2001
).7.
H.
Watanabe
, M.
Saitoh
, N.
Ikarashi
, and T.
Tatsumi
, Appl. Phys. Lett.
85
, 449
(2004
).8.
M. Q.
Lopez
et al., Appl. Phys. Lett.
79
, 4192
(2001
).9.
A.
Kawamoto
, J.
Jameson
, P.
Griffin
, K.
Cho
, and R.
Dutton
, IEEE Electron Device Lett.
22
, 14
(2001
).10.
G.
Wilk
, R.
Wallace
, and J.
Anthony
, J. Appl. Phys.
87
, 484
(2000
).11.
C.
Kang
, P.
Lysaght
, R.
Choi
, B.
Lee
, S.
Rhee
, C.
Choi
, M.
Akbar
, and J.
Lee
, Appl. Phys. Lett.
86
, 222906
(2005
).12.
S.
Kamiyama
, T.
Miura
, Y.
Nara
, and T.
Arikado
, Appl. Phys. Lett.
86
, 222904
(2005
).13.
M.
Hiratani
, K.
Torii
, Y.
Shimamoto
, and S.
Saito
, Appl. Surf. Sci.
216
, 208
(2003
).14.
K.
Kukli
, M.
Ritala
, M.
Leskelä
, T.
Sajavaara
, J.
Keinonen
, R.
Hegde
, D.
Gilmer
, and P.
Tobin
, J. Electrochem. Soc.
151
, F98
(2004
).15.
C. M.
Lopez
and E. A.
Irene
, J. Appl. Phys.
99
, 024101
(2006
).16.
J.
Kim
and K.
Yong
, J. Electrochem. Soc.
152
, F45
(2005
).17.
N.
Ikarashi
and K.
Manabe
, J. Appl. Phys.
94
, 480
(2003
).18.
J.
Kim
and K.
Yong
, J. Electrochem. Soc.
152
, F153
(2005
).19.
M.
Gutowski
, J.
Jaffe
, C.
Liu
, M.
Stoker
, R.
Hegde
, R.
Rai
, and P.
Tobin
, Appl. Phys. Lett.
80
, 1897
(2002
).20.
H.
Kato
, T.
Nango
, T.
Miyagawa
, T.
Katagiri
, K.
Seol
, and Y.
Ohki
, J. Appl. Phys.
92
, 1106
(2002
).21.
O.
Renault
, D.
Samour
, J.
Damlencourt
, D.
Blin
, F.
Martin
, S.
Marthon
, N.
Barrett
, and P.
Besson
, Appl. Phys. Lett.
81
, 3627
(2002
).22.
P.
Punchaipetch
, G.
Pant
, M.
Lopez
, M.
Bounanani
, M.
Kim
, R.
Wallace
, and B.
Gnade
, Thin Solid Films
425
, 68
(2003
).23.
C.
Wagner
, A.
Naumkin
, A.
Kraut-Vass
, J.
Allison
, C.
Powell
, and J.
Rumble
, Jr., NIST X-Ray Photoelectron Spectroscopy Database, Version 3.4 (Web Version), http://srdata.nist.gov/xps/index.htm24.
B.
Streetman
and S.
Banerjee
, Solid State Electronic Devices
, 5th ed. (Prentice-Hall
, Englewood Cliffs, NJ
, 2000
).25.
Y.
Tsividis
, Operation and Modeling of the MOS Transistor
, 2nd ed. (McGraw-Hill
, New York
, 1999
).26.
M. F.
Wang
, T. H.
Hou
, K. L.
Mai
, P. S.
Lim
, L. G.
Yao
, Y.
Jin
, S. C.
Chen
, and M. S.
Liang
, IEEE International Conference on Integrated Circuit Design and Technology
(IEEE
, Piscataway, NJ
, 2004
), p. 283
.27.
J.
Zhu
, Z.
Liu
, and Y.
Feng
, J. Phys. D
36
, 3051
(2003
).28.
G. D.
Wilk
and R. M.
Wallance
, Appl. Phys. Lett.
74
, 2854
(1999
).29.
H.
Watanabe
, Appl. Phys. Lett.
81
, 4221
(2002
).© 2006 American Institute of Physics.
2006
American Institute of Physics
You do not currently have access to this content.