Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers

The effects of $InGaAs∕GaNAs$ barrier combinations were investigated in the metal organic vapor phase epitaxy grown GaInNAs quantum wells (QWs). Significant improvement was made in the optical performance of the $1.3μm$ range with the proposed structures. Structural investigation linked with the optical properties reveals that a thin InGaAs layer, placed between GaInNAs QWs and GaNAs layers, plays a role in redistributing the nitrogen within the QWs while maintaining a sharp interface. The amount of diffused nitrogen is proportional to the strain residing in the InGaAs layer, which explains the tendency of blueshift with the increase in GaNAs thickness.