The characteristics of gate dielectric along with the interfacial layer on - and -plasma treated partially strain-compensated heterostructures have been investigated using spectroscopic and electrical measurements. Time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy analyses show the formation of an oxygen or nitrogen rich Zr-germanosilicate interfacial layer between the deposited and SiGeC films. The electrical and charge trapping properties under a constant current stressing have been studied using a metal-oxide-semiconductor structure. The -plasma treated SiGeC film has a higher effective dielectric constant than that of the -plasma treated films. The equivalent areal densities of charge defects, , are found to be and for - and -plasma treated films, respectively. Considerably less trapped charges in the -treated gate dielectric stack under constant current stressing make it highly attractive for SiGeC based scaled metal-oxide-semiconductor device applications.
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1 August 2006
Research Article|
August 04 2006
Characteristics of gate dielectrics on - and -plasma treated partially strain-compensated layers
R. Mahapatra;
R. Mahapatra
a)
Department of Physics and Meteorology,
Indian Institute of Technology
, Kharagpur 721 302, India
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S. Maikap;
S. Maikap
b)
Center for Microstructure Science of Materials, School of Materials Science and Engineering,
Seoul National University
, Seoul 151-742, South Korea
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Je-Hun Lee;
Je-Hun Lee
Center for Microstructure Science of Materials, School of Materials Science and Engineering,
Seoul National University
, Seoul 151-742, South Korea
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R. Mahapatra
a)
S. Maikap
b)
Je-Hun Lee
S. K. Ray
c)
Department of Physics and Meteorology,
Indian Institute of Technology
, Kharagpur 721 302, Indiaa)
Present address: School of Electrical, Electronic and Computer Engineering, University of Newcastle, UK.
b)
Present address: Electronics Research and Service Organization (ERSO), ITRI, Hsinchu, Taiwan, Republic of China.
c)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Appl. Phys. 100, 034105 (2006)
Article history
Received:
November 18 2005
Accepted:
June 14 2006
Citation
R. Mahapatra, S. Maikap, Je-Hun Lee, S. K. Ray; Characteristics of gate dielectrics on - and -plasma treated partially strain-compensated layers. J. Appl. Phys. 1 August 2006; 100 (3): 034105. https://doi.org/10.1063/1.2227269
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