capacitors were fabricated on (LAO) and (STO) substrates under identical conditions. Dielectric properties were measured in the temperature range from . High dielectric constants and single dielectric transition peaks were found in both TMO films. The dielectric constants of TMO film on STO substrate were larger than those of TMO film on LAO substrate; correspondingly, the transition temperature of TMO film on STO substrate was higher than that of TMO film on LAO substrate. Although x-ray diffraction showed both TMO films had the same epitaxial orientation, atom force microscopy revealed that the films had different surface morphologies, which originated from the YBCO layers on different substrates. The good surface morphology of YBCO layer and the element diffusion between TMO and YBCO layers may be suggested to be responsible for the significant improvement in the dielectric properties of TMO thin film.
Microstructure-dependent dielectric properties of in capacitors
Yimin Cui, Wei Cai, Yuan Li, JianQiang Qian, Ping Xu, Rongming Wang, Junen Yao, Liuwan Zhang; Microstructure-dependent dielectric properties of in capacitors. J. Appl. Phys. 1 August 2006; 100 (3): 034101. https://doi.org/10.1063/1.2220479
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